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BF908WR

Features: · High forward transfer admittance· Short channel transistor with high forward transfer admittance to input capacitance ratio· Low noise gain controlled amplifier up to 1 GHz.ApplicationVHF and UHF applications with 12 V supply voltage, such as television tuners and professional communic...

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SeekIC No. : 004299582 Detail

BF908WR: Features: · High forward transfer admittance· Short channel transistor with high forward transfer admittance to input capacitance ratio· Low noise gain controlled amplifier up to 1 GHz.ApplicationVH...

BF908WR Data Sheet

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Part Number:
BF908WR
Supply Ability:
5000

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  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/11/23

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Product Details

Description



Features:

· High forward transfer admittance
· Short channel transistor with high forward transfer admittance to input capacitance ratio
· Low noise gain controlled amplifier up to 1 GHz.




Application

VHF and UHF applications with 12 V supply voltage, such as television tuners and professional communications equipment.




Pinout

Connection Diagram


Specifications

SYMBOL
PARAMETER
 CONDITIONS MIN.
TYP.
MAX.
UNIT
VDS drain-source voltage   - - 12 V
ID drain current   - - 40 mA
Ptot total power dissipation   - - 300 mW
Tj junction temperature   - - 150 °C
|Yfs| transfer admittance   36 43 50 mS
Cig1-s input capacitance at gate 1   2.4 3.1 4 pF
Crs feedback capacitance f = 1 MHz 20 30 45 fF
F noise figure at 800 MHz f = 800 MHz - 1.5 2.5 dB



Description

Depletion type field effect transistor BF908WR in a plastic microminiature SOT343R package. The transistor is protected against excessive input voltage surges by integrated back-to-back diodes between gates and source.




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