© 2008-2012 SeekIC.com Corp.All Rights Reserved.
Response in 12 hours
Mfg:Mini-Circuits Pack:Block DC D/C:07+ Vendor:Other Category:Other
Pack:*0805 Vendor:Other Category:Other
Vendor:Other Category:Other
Vendor:Other Category:Other
Vendor:Other Category:Other
Vendor:Other Category:Other
Vendor:Other Category:Other
Vendor:Other Category:Other
Vendor:Other Category:Other
Vendor:Other Category:Other
Vendor:Other Category:Other
Vendor:Other Category:Other
Vendor:Other Category:Other
Vendor:Other Category:Other
Vendor:Other Category:Other
Vendor:Other Category:Other
Mfg:BL D/C:2002 Vendor:Other Category:Other
Vendor:Other Category:Other
Vendor:Other Category:Other
Vendor:Other Category:Other
The BL-HX031 is one member of the BL-H...1 family which is designed as the standard chip LED lamp. There are some points of notes about this device:(1)Condition for IFp is pulse of 1/10 duty and 0.1msec width;(2)Specific...
Vendor:Other Category:Other
Vendor:Other Category:Other
Vendor:Other Category:Other
Vendor:Other Category:Other
Vendor:Other Category:Other
Vendor:Other Category:Other
Vendor:Other Category:Other
Vendor:Other Category:Other
Vendor:Other Category:Other
Mfg:BRIGHT LED D/C:2006 Vendor:Other Category:Other
Vendor:Other Category:Other
Vendor:Other Category:Other
Vendor:Other Category:Other
Vendor:Other Category:Other
Vendor:Other Category:Other
Vendor:Other Category:Other
Vendor:Other Category:Other
Vendor:Other Category:Other
Vendor:Other Category:Other
Vendor:Other Category:Other
Vendor:Other Category:Other
Vendor:Other Category:Other
Vendor:Other Category:Other
Vendor:Other Category:Other
Vendor:Other Category:Other
Vendor:Other Category:Other
Vendor:Other Category:Other
Vendor:Other Category:Other
Vendor:Other Category:Other
Vendor:Other Category:Other
Vendor:Other Category:Other
Vendor:Other Category:Other
Vendor:Other Category:Other
Vendor:Other Category:Other
Vendor:Other Category:Other
The BLFC455D features are as follows:
• AM Ceramic filters are connected in a ladder structure and are available as either 4/6 element devices• Bandwidths from 6 to 30 kHz
Mfg:N/A Pack:SOT502B Vendor:Other Category:Other
110 W LDMOS power transistor BLF900S-110 for base station applications at frequencies from 800 to 1000 MHz.
Vendor:Other Category:Other
110 W LDMOS power transistor for base station applications at frequencies from 800 to 1000 MHz.
The BLF900-110 has eight features.(1)typical CDMA IS95 performance at standard settings with a supply voltage of 27 V, freq...
Vendor:Other Category:Other
The BLF861A has seven features.(1)high power gain.(2)easy power control.(3)excellent ruggedness.(4)designed to withstand abrupt load mismatch errors.(5)source on underside eliminates DC isolators; reducing common mode in...
Vendor:Other Category:Other
Silicon N-channel enhancement mode lateral D-MOS push-pull transistor BLF861 in an SOT540A package with ceramic cap. The common source is connected to the mounting flange.
The BLF861 has five features.(1)high power gain...
Mfg:PHILIPS Pack:N/A D/C:N/A Vendor:Other Category:Other
50 W LDMOS power transistor BLF6G38LS-50 for base station applications at frequencies from 3400 MHz to 3800 MHz.
Mfg:PHILIPS Pack:N/A D/C:N/A Vendor:Other Category:Other
50 W LDMOS power transistor BLF6G38-50 for base station applications at frequencies from 3400 MHz to 3800 MHz.
Mfg:PHILIPS Pack:N/A D/C:N/A Vendor:Other Category:Other
110 W LDMOS power transistor BLF6G20LS-110 for base station applications at frequencies from 1800 MHz to 2000 MHz.
Mfg:PHILIPS Pack:N/A D/C:N/A Vendor:Other Category:Other
110 W LDMOS power transistor BLF6G20-110 for base station applications at frequencies from 1800 MHz to 2000 MHz.
Vendor:Other Category:Other
200 W LDMOS power transistor BLF6G10LS-200R for base station applications at frequencies from 800 MHz to 1000 MHz.
Mfg:PHILIPS Pack:N/A D/C:N/A Vendor:Other Category:Other
200 W LDMOS power transistor BLF6G10LS-200 for base station applications at frequencies from 800 MHz to 1000 MHz.
Vendor:Other Category:Other
The BLF647 has six features.(1)high power gain.(2)easy power control.(3)excellent ruggedness.(4)source on underside eliminates DC isolators; reducing common mode inductance.(5)designed for broadband operation (UHF band)....
Vendor:Other Category:Other
The BLF578 is designed as one kind of power LDMOS transistor for broadcast applications and industrial applications in the HF to 500 MHz band.Features of BLF578 are:(1)typical pulsed performance at frequency of 225 MHz, ...
Vendor:Other Category:Other
The BLF574 is designed as one kind of power LDMOS transistor BLF574 for broadcast applications and industrial applications in the HF to 500 MHz band.Features of it are:(1)typical pulsed performance at frequency of 225 MH...
Vendor:Other Category:Other
The BLF548 has five features.(1)high power gain.(2)easy power control.(3)good thermal stability.(4)gold metallization ensures excellent reliability.(5)designed for broadband operation.
The BLF548 is capable of withstand...
Vendor:Other Category:Other
The BLF547 has five features.(1)high power gain.(2)easy power control.(3)good thermal stability.(4)gold metallization ensures excellent reliability.(5)designed for broadband operation.
Dual push-pull silicon N-channel e...
Vendor:Other Category:Other
The BLF546 is a type of UHF push-pull powewr mos transistor.Silicon N-channel enhancement mode vertical D-MOS push-pull transistor applied for communications transmitter applications in the UHF frequency range. The trans...
Vendor:Other Category:Other
The BLF545 is a type of UHF push-pull powewr mos transistor.Silicon N-channel enhancement mode vertical D-MOS push-pull transistor applied for communications transmitter applications in the UHF frequency range. The trans...
Mfg:PHILIPS Pack:(LX)high-frequency Vendor:Other Category:Other
Silicon N-channel enhancement mode vertical D-MOS push-pull transistor BLF544B designed for communications transmitterapplications in the UHF frequency range.The transistor BLF544B is encapsulated in a 4-lead, SOT268 bal...
Mfg:NXP D/C:09+ Vendor:Other Category:Other
N-channel enhancement mode vertical D-MOS power transistor BLF544 encapsulated in a 6-lead, SOT171A flange package with a ceramic cap. All leads are isolated from the flange.BLF544 is a marking code showing gate-source v...
Pack:500 Vendor:Other Category:Other
Silicon N-channel enhancement mode vertical D-MOS transistor BLF543 designed for communications transmitter applications in the UHF frequency range.The transistor BLF543 is encapsulated in a 6-lead, SOT171 flange envelop...
Mfg:PHL Vendor:Other Category:Other
Silicon N-channel enhancement mode vertical D-MOS transistor BLF542 designed for large signal amplifier applications in the UHF frequency range.The BLF542 is encapsulated in a 6-lead, SOT171 flange envelope, with a ceram...
Pack:500 Vendor:Other Category:Other
Silicon N-channel enhancement mode vertical D-MOS transistor BLF522 designed for communications transmitter applications in the UHF frequency range.The transistor BLF522 is encapsulated in a 6-lead, SOT171 flange envelop...
Mfg:NXP D/C:07/08+ Vendor:Other Category:Other
Silicon N-channel enhancement mode vertical D-MOS transistor BLF521 designed for communications transmitter applications in the UHF frequency range.The transistor BLF521 is encapsulated in a 4-lead, SOT172D studless enve...
D/C:07+ Vendor:Other Category:Other
Silicon N-channel enhancement mode vertical D-MOS power transistor BLF404 in an 8-lead SOT409A SMD package with a ceramic cap.
Mfg:NXP D/C:09+ Vendor:Other Category:Other
Dual push-pull silicon N-channel enhancement mode vertical D-MOS transistor BLF378 encapsulated in a 4-lead, SOT262A1 balanced flange package with two ceramic caps. The mounting flange provides the common source connecti...
Vendor:Other Category:Other
The BLF368 is a type of VHF push-pull power MOS transistor,which is designed for broadcast transmitter applications in the VHF frequency range. The transistor is encapsulated in a 4-lead SOT262A1 balanced flange package,...
Vendor:Other Category:Other
Dual push-pull silicon N-channel enhancement mode vertical D-MOS transistor BLF348, designed for broadcast transmitter applications in the VHF frequency range.
The BLF348 is encapsulated in a 4-lead, SOT262 A1 balanced ...
Mfg:NXP D/C:07/08+ Vendor:Other Category:Other
Silicon N-channel enhancement mode vertical D-MOS transistor BLF346 encapsulated in a 6-lead, SOT119 flange package, with a ceramic cap. All leads are isolated from the flange. A marking code, showing gate-source voltage...
Vendor:Other Category:Other
Dual push-pull silicon N-channel enhancement mode vertical D-MOS transistor BLF278 encapsulated in a 4-lead, SOT262A1 balanced flange package with two ceramic caps. The mounting flange provides the common source connecti...
Mfg:PHILIP Pack:HIGHFREQUENCY D/C:N/A Vendor:Other Category:Other
Silicon N-channel enhancement mode vertical D-MOS transistor BLF277 designed for large signal amplifier applications in the VHF frequency range.
The transistor BLF277 is encapsulated in a 6-lead, SOT119 flange envelope...
Mfg:PHILIPS Vendor:Other Category:Other
Silicon N-channel enhancement mode vertical D-MOS transistor BLF276 designed for large signal amplifier applications in the VHF frequency range. The transistor delivers an output power of 100 W in class-B operation at a ...
Mfg:NXP D/C:09+ Vendor:Other Category:Other
Dual push-pull silicon N-channel enhancement mode vertical D-MOS transistor BLF248, designed for large signal amplifier applications in the VHF frequency range.The transistor BLF248 is encapsulated in a 4-lead SOT262 A1 ...
Mfg:PHILIPS Vendor:Other Category:Other
Silicon N-channel enhancement mode vertical D-MOS push-pull transistor BLF247B encapsulated in a 4-lead, SOT262A1 balanced flange type package with two ceramic caps. The mounting flange provides the common source connect...
Pack:500 Vendor:Other Category:Other
Silicon N-channel enhancement mode vertical D-MOS transistor BLF246 encapsulated in a 4-lead, SOT121 flange package, with a ceramic cap. All leads are isolated from the flange. A marking code of BLF246, showing gate-sour...
Vendor:Other Category:Other
Dual push-pull silicon N-channel enhancement mode vertical D-MOS transistor BLF245B designed for large signal amplifier applications in the VHF frequency range. The BLF245B is encapsulated in a 4-lead, SOT279 balanced fl...
Mfg:PHL Vendor:Other Category:Other
Silicon N-channel enhancement mode vertical D-MOS transistor BLF245 designed for large signal amplifier applications in the VHF frequency range.
The transistor BLF245 is encapsulated in a 4-lead SOT123 flange envelope, ...
Mfg:NXP D/C:09+ Vendor:Other Category:Other
Silicon N-channel enhancement mode vertical D-MOS transistor BLF244 designed for large signal amplifier applications in the VHF frequency range.
The transistor BLF244 is encapsulated in a 4-lead SOT123 flange envelope, ...
Mfg:PHL Vendor:Other Category:Other
Silicon N-channel enhancement mode vertical D-MOS transistor BLF242 designed for professional transmitter applications in the HF/VHF frequency range.The transistor BLF242 is encapsulated in a 4-lead, SOT123 flange envelo...
Mfg:N/A Pack:N/A D/C:N/A Vendor:Other Category:Other
Silicon N-channel enhancement mode vertical D-MOS transistor BLF225 designed for communications transmitter applications in the VHF frequency range.
The transistor BLF225 is encapsulated in a 4-lead, SOT123 flange envel...
Mfg:NXP D/C:09+ Vendor:Other Category:Other
Push-pull silicon N-channel enhancement mode lateral D-MOStransistor BLF2048 encapsulatedina4-leadflangepackage (SOT539A) with a ceramic cap. The common source is connected to the mounting flange.
Mfg:NXP D/C:09+ Vendor:Other Category:Other
Silicon N-channel enhancement mode lateral D-MOS transistors BLF2047L encapsulated in a 2-lead SOT502A flange package with a ceramic cap. The common source is connected to the mounting flange.
Mfg:PHILIP Vendor:Other Category:Other
Silicon N-channel enhancement mode lateral D-MOS transistor BLF2047 encapsulated in a 2-lead flange SOT502A package with a ceramic cap. The common source is connected to the mounting flange.
Mfg:NXP D/C:09+ Vendor:Other Category:Other
Silicon N-channel enhancement mode lateral D-MOS transistor BLF2045 encapsulated in a 2-lead flange package (SOT467C) with a ceramic cap. The common source is connected to the mounting flange.
Mfg:NXP D/C:09+ Vendor:Other Category:Other
Silicon N-channel enhancement mode lateral D-MOS transistor BLF2043 encapsulated in a 2-lead flangeless package (SOT538A) with a ceramic cap. The common source is connected to the mounting base.
Mfg:PHILIPS Vendor:Other Category:Other
90 W LDMOS power transistor BLF2022-90 for base station applications at frequencies from 2000 to 2200 MHz.
© 2008-2012 SeekIC.com Corp.All Rights Reserved.