BLF542 Selling Leads, Price trend, BLF542 DataSheet download, circuit diagram from SeekIC.com

Features: * High power gain* Easy power control* Gold metallization* Good thermal stability* Withstands full load mismatch* Designed for broadband operation.PinoutSpecifications SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VDS drain-source voltage 60 V VGS gat...

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SeekIC No. : 004300565 Detail

BLF542: Features: * High power gain* Easy power control* Gold metallization* Good thermal stability* Withstands full load mismatch* Designed for broadband operation.PinoutSpecifications S...

BLF542 Data Sheet

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Part Number:: BLF542
Supply Ability:: 5000

Price Break

Qty
1~5000

Unit Price
Negotiable

Processing time
15 Days

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Upload time: 2024/12/21

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Recent History
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Product Details

Description

Features:

* High power gain
* Easy power control
* Gold metallization
* Good thermal stability
* Withstands full load mismatch
* Designed for broadband operation.

Pinout

Connection Diagram

Specifications

SYMBOL	PARAMETER	CONDITIONS	MIN.	MAX.	UNIT
VDS	drain-source voltage			60	V
VGS	gate-source voltage			20	V
ID	DC drain current			1.5	A
Ptot	total power dissipation	Tmb =25 °C		20	W
Tstg	storage temperature		-65	150	C
Tj	junction temperature			200	C

Description

Silicon N-channel enhancement mode vertical D-MOS transistor BLF542 designed for large signal amplifier applications in the UHF frequency range.

The BLF542 is encapsulated in a 6-lead, SOT171 flange envelope, with a ceramic cap. All leads are isolated from the flange.

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BLF542

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