BLF6G10LS-200

Frequency :
Gain :
Output Power :
Configuration : Single
Transistor Polarity : N-Channel
Maximum Operating Temperature : + 150 C
Drain-Source Breakdown Voltage : 65 V
Packaging : Tube
Gate-Source Breakdown Voltage : 13 V
Continuous Drain Current : 49 A
Package / Case : SOT502B


Features:

· Typical 2-carrier W-CDMA performance at frequencies of 869 MHz and 894 MHz, a supply voltage of 28 V and an _IDq of 1400 mA:
   · Average output power = 40 W
   · Power gain = 20 dB
   · Efficiency = 27 %
   · ACPR = -41 dBc
· Easy power control
· Integrated ESD protection
· Excellent ruggedness
· High efficiency
· Excellent thermal stability
· Designed for broadband operation (800 MHz to 1000 MHz)
· Internally matched for ease of use
· Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances (RoHS)


Application

·RF power amplifiers for GSM, GSM EDGE, W-CDMA and CDMA base stations and multicarrier applications in the 800 MHz to 1000 MHz frequency range.


Pinout




Specifications

Symbol	Parameter	Conditions	Min	Max	Unit
VDS	drain-source voltage		-	65	V
VGS	gate-source voltage		-0.5	+13	V
ID	drain current		-	49	A
Tstg	storage temperature		-65	+150
Tj	junction temperature		-	225

Description

200 W LDMOS power transistor BLF6G10LS-200 for base station applications at frequencies from 800 MHz to 1000 MHz.