BLF647

The BLF647 has six features.(1)high power gain.(2)easy power control.(3)excellent ruggedness.(4)source on underside eliminates DC isolators; reducing common mode inductance.(5)designed for broadband operation (UHF band).(6)internal input damping for excellent stability over the whole frequency range.

Silicon N-channel enhancement mode lateral D-MOS push-pull transistor in an SOT540A package with ceramic cap. The common source is connected to the mounting flange.This product is supplied in anti-static packing to prevent damage caused by electrostatic discharge during transport and handling. For further information, refer to Philips specs.: SNW-EQ-608, SNW-FQ-302A and SNW-FQ-302B.The BLF647 is capable of withstanding a load mismatch corresponding to VSWR = 10 : 1 through all phases under the following conditions: VDS = 28 V; f = 100 MHz at rated load power.The BLF647 is capable of withstanding abrupt source or load mismatch errors under the nominal power conditions.

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