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BLF900S-110

Features: * Typical CDMA IS95 performance at standard settings with a supply voltage of 27 V, frequency of 881.5 MHz and IDQ of 700 mA; adjacent channel bandwidth is 30 kHz, adjacent channel at ±750 kHz: Output power = 24 W (AV) Gain = 15 dB Efficiency = 27% ACPR = -45 dBc at 750 kHz and BW = 30 k...

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BLF900S-110: Features: * Typical CDMA IS95 performance at standard settings with a supply voltage of 27 V, frequency of 881.5 MHz and IDQ of 700 mA; adjacent channel bandwidth is 30 kHz, adjacent channel at ±750...

BLF900S-110 Data Sheet

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Part Number:
BLF900S-110
Supply Ability:
5000

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Product Details

Description



Features:

* Typical CDMA IS95 performance at standard settings with a supply voltage of 27 V, frequency of 881.5 MHz and IDQ of 700 mA; adjacent channel bandwidth is 30 kHz, adjacent channel at ±750 kHz:
Output power = 24 W (AV)
Gain = 15 dB
Efficiency = 27%
ACPR = -45 dBc at 750 kHz and BW = 30 kHz.
* 110 W CW performance
* Easy power control
* Excellent ruggedness
* High power gain
* Excellent thermal stability
* Designed for broadband operation (800 to 1000 MHz)
* Internally matched for ease of use.


Application

* RF power amplifier for GSM, EDGE and CDMA base stations and multicarrier operations in the 800 to 1000 MHz frequency range.


Pinout

Connection Diagram


Specifications

SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
VDS drain-source voltage 75 V
VGS gate-source voltage ±15 V
Tstg storage temperature -65 150 C
Tj junction temperature 200 C



Description

110 W LDMOS power transistor BLF900S-110 for base station applications at frequencies from 800 to 1000 MHz.


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