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BLF277

Features: · High power gain· Easy power control· Gold metallization ensures excellent reliability· Good thermal stability· Withstands full load mismatch.Specifications SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VDS drain-source voltage 65 V VGS gate-source v...

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SeekIC No. : 004300559 Detail

BLF277: Features: · High power gain· Easy power control· Gold metallization ensures excellent reliability· Good thermal stability· Withstands full load mismatch.Specifications SYMBOL PAR...

BLF277 Data Sheet

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Part Number:
BLF277
Supply Ability:
5000

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  • 1~5000
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  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Description



Features:

· High power gain
· Easy power control
· Gold metallization ensures excellent reliability
· Good thermal stability
· Withstands full load mismatch.


Specifications

SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
VDS drain-source voltage 65 V
VGS gate-source voltage ±20 V
ID DC drain current 16 A
Ptot total power dissipation up to Tmb = 25  C; 220 W
Tstg storage temperature -65 150 C
Tj junction temperature 200 C



Description

Silicon N-channel enhancement mode vertical D-MOS transistor BLF277 designed for large signal amplifier  applications in the VHF frequency range.

The transistor BLF277 is encapsulated in a 6-lead, SOT119 flange envelope, with a ceramic cap. All leads are isolated
from the flange.

A marking code, showing gate-source voltage (VGS) information of BLF277 is provided for matched pair applications. Refer to the 'General' section for further information.




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