BLF545

The BLF545 is a type of UHF push-pull powewr mos transistor.Silicon N-channel enhancement mode vertical D-MOS push-pull transistor applied for communications transmitter applications in the UHF frequency range. The transistor BLF545 is encapsulated in a 4-lead, SOT268 balanced flange envelope, with two ceramic caps. The mounting flange offers the common source connection for the transistors.

The BLF546 has the following features:(1)High power gain;(2)Easy power control;(3)Good thermal stability;(4)Gold metallization ensures,excellent reliability;(5)Designed for broadband operation.

BLF545 also has some outstanding limiting values(In accordance with the absolute maximum System ,Per transistor secti on unless otherwise specified.) and electrical characteristics of BLF545(Tj=25°C).Absolute maximum ratings:(1):drain-source voltage is 65 V max;(2):gate-source voltage is 20 V max;(3):DC drain current is 3.5 A max;(4):total power dissipation is 92 W max(up to Tmb = 25 °C; total device;both sections equally loaded);(5): storage temperature is 65 to 150 °C;(6): junction temperature is 200 °C max.characteristics:(1):drain-source breakdown voltage is 65 V min when VGS is 0 and ID is 10 mA;(2):drain-source leakage current is 1 mA max when VGS is 0 and VDS is 28 V;(3): gate-sour ce leakage current is 1 uA max when ±VGS is 20 V and VDS is 0 ;(4): gate-source threshold voltage is 1 V min and 4 V max when ID is 40 mA and VDS is 10 V;(5):forward transconductance is 1.2 s min and 1.7 s typ when ID is 2.4 A and VDS is 10 V;(6):drain-source on-state resistance is 0.85 typ and 1.25 max when ID is 1.2 A and VGS is 10 V;(7):on-state drain current is 4.8 A typ when VGS is 15 V and VDS is 10 V;(8):input capacitance is 32 pF when VGS is 0 , VDS is 28 V and f is 1 MHz;(9): output capacitance is 24 pF when VGS is 0, VDS is 28 V and f is 1 MHz.etc.