BLF278

Transistors RF MOSFET Power RF Transistor

product image

BLF278 Picture
SeekIC No. : 00220283 Detail

BLF278: Transistors RF MOSFET Power RF Transistor

floor Price/Ceiling Price

US $ 87.6~96.59 / Piece | Get Latest Price
Part Number:
BLF278
Mfg:
Advanced Semiconductor, Inc.
Supply Ability:
5000

Price Break

  • Qty
  • 0~5
  • 5~10
  • 10~25
  • 25~50
  • Unit Price
  • $96.59
  • $93
  • $88.59
  • $87.6
  • Processing time
  • 15 Days
  • 15 Days
  • 15 Days
  • 15 Days
View more price & deliveries
Total Cost: $ 0.00

SeekIC Buyer Protection PLUS - newly updated for 2013!

  • Escrow Protection.
  • Guaranteed refunds.
  • Secure payments.
  • Learn more >>

Month Sales

268 Transactions

Rating

evaluate  (4.8 stars)

Upload time: 2024/11/4

Payment Methods

All payment methods are secure and covered by SeekIC Buyer Protection PLUS.

Notice: When you place an order, your payment is made to SeekIC and not to your seller. SeekIC only pays the seller after confirming you have received your order. We will also never share your payment details with your seller.
Product Details

Quick Details

Packaging : Tray    

Description

Configuration :
Transistor Polarity :
Frequency :
Gain :
Output Power :
Drain-Source Breakdown Voltage :
Continuous Drain Current :
Gate-Source Breakdown Voltage :
Maximum Operating Temperature :
Package / Case :
Packaging : Tray


Features:

* High power gain
* Easy power control
* Good thermal stability
* Gold metallization ensures excellent reliability.





Application

* Broadcast transmitters in the VHF frequency range.




Pinout

  Connection Diagram




Specifications

SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
VDS drain-source voltage 65 V
VGS gate-source voltage ±20 V
ID DC drain current 18 A
Ptot total power dissipation up to Tmb = 25 C; total device;both sections equally loaded 500 W
Tstg storage temperature -65 150 C
Tj junction temperature 200 C





Description

Dual push-pull silicon N-channel enhancement mode vertical D-MOS transistor BLF278 encapsulated in a 4-lead, SOT262A1 balanced flange package with two ceramic caps. The mounting flange provides the common source connection for the transistors.

Dual push-pull silicon N-channel enhancement mode vertical D-MOS transistor encapsulated in a 4-lead,BLF278 balanced flange package with two ceramic caps. The mounting flange of BLF278 provides the common source connection for the transistors.The device is supplied in an antistatic package.The gate-source input must be protected against static discharge during transport or handling.

The BLF278 contains beryllium oxide. The BLF278 is entirely safe provided that the BeO discs are not damaged.All persons who handle, use or dispose of this product should be aware of its nature and of the necessary safety precautions. After use, dispose of as chemical or special waste according to the regulations applying at the location of the user. It must never be thrown out with the general or domestic waste.

Limiting values of BLF278 given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability.These products are not designed for use in life support appliances, devices, or systems where malfunction of BLF278 can reasonably be expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale.






Customers Who Bought This Item Also Bought

Margin,quality,low-cost products with low minimum orders. Secure your online payments with SeekIC Buyer Protection.
Prototyping Products
DE1
Static Control, ESD, Clean Room Products
Resistors
Integrated Circuits (ICs)
Cables, Wires
Semiconductor Modules
View more