Configuration
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Transistor Polarity
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Frequency
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Gain
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Output Power
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Drain-Source Breakdown Voltage
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Continuous Drain Current
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Gate-Source Breakdown Voltage
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Maximum Operating Temperature
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Package / Case
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Packaging
: Tray
Features: * High power gain
* Easy power control
* Excellent ruggedness
* Designed to withstand abrupt load mismatch errors
* Source on underside eliminates DC isolators; reducing common mode inductance
* Designed for broadband operation (UHF band)
* Internal input and output matching for high gain and optimum broadband operation.Application* Communication transmitter applications in the UHF frequency range.Pinout
DescriptionThe BLF861A has seven features.(1)high power gain.(2)easy power control.(3)excellent ruggedness.(4)designed to withstand abrupt load mismatch errors.(5)source on underside eliminates DC isolators; reducing common mode inductance.(6)designed for broadband operation (UHF band).(7)internal input and output matching for high gain and optimum broadband operation.
Silicon N-channel enhancement mode lateral D-MOS push-pull transistor BLF861A in a SOT540A package with ceramic cap. The common source of BLF861A is connected to the mounting flange.This product is supplied in anti-static packing to prevent damage caused by electrostatic discharge during transport and handling. For further information, refer to Philips specs.: SNW-EQ-608, SNW-FQ-302A and SNW-FQ-302B.
All rights of BLF861A are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner.The information presented in this document of BLF861A does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights.
BLF861A Data Sheet
