BLF2045

Frequency :
Gain :
Output Power :
Configuration : Single
Transistor Polarity : N-Channel
Drain-Source Breakdown Voltage : 65 V
Packaging : Tube
Gate-Source Breakdown Voltage : +/- 15 V
Maximum Operating Temperature : + 200 C
Continuous Drain Current : 4.5 A
Package / Case : SOT-467


Features:

* High power gain
* Easy power control
* Excellent ruggedness
* Source on underside eliminates DC isolators, reducing common mode inductance
* Designed for broadband operation.


Application

* Communication transmitter applications (PCN/PCS) in  the 1.8  to 2.2 GHz frequency range.


Pinout




Specifications

SYMBOL	PARAMETER	CONDITIONS	MIN.	MAX.	UNIT
VDS	drain-source voltage			65	V
VGS	gate-source voltage			±15	V
ID	DC drain current			4.5	A
Tstg	storage temperature		-65	150	C
Tj	junction temperature			200	C

Description

Silicon N-channel enhancement mode lateral D-MOS  transistor BLF2045 encapsulated in a 2-lead flange package  (SOT467C) with a ceramic cap. The common source is  connected to the mounting flange.