Transistors RF MOSFET Power RF Transistor
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Packaging : | Tray |
SYMBOL | PARAMETER | CONDITIONS | MIN. | MAX. | UNIT |
VDS | drain-source voltage | 65 | V | ||
VGS | gate-source voltage | 20 | V | ||
ID | DC drain current | 6 | A | ||
Ptot | total power dissipation | up to Tmb = 25 C; total device;both sections equally loaded | 68 | W | |
Tstg | storage temperature | -65 | 150 | C | |
Tj | junction temperature | 200 | C | ||
Silicon N-channel enhancement mode vertical D-MOS transistor BLF245 designed for large signal amplifier applications in the VHF frequency range.
The transistor BLF245 is encapsulated in a 4-lead SOT123 flange envelope, with a ceramic cap. All leads are isolated from the flange.
Matched gate-source voltage (VGS) groups are available on request.