BLF245

Transistors RF MOSFET Power RF Transistor

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BLF245 Picture
SeekIC No. : 00220280 Detail

BLF245: Transistors RF MOSFET Power RF Transistor

floor Price/Ceiling Price

US $ 19.44~27 / Piece | Get Latest Price
Part Number:
BLF245
Mfg:
Advanced Semiconductor, Inc.
Supply Ability:
5000

Price Break

  • Qty
  • 0~20
  • 20~25
  • 25~50
  • 50~100
  • Unit Price
  • $27
  • $24.3
  • $21.6
  • $19.44
  • Processing time
  • 15 Days
  • 15 Days
  • 15 Days
  • 15 Days
View more price & deliveries
Total Cost: $ 0.00

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Month Sales

268 Transactions

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Upload time: 2024/12/21

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Product Details

Quick Details

Packaging : Tray    

Description

Configuration :
Transistor Polarity :
Frequency :
Gain :
Output Power :
Drain-Source Breakdown Voltage :
Continuous Drain Current :
Gate-Source Breakdown Voltage :
Maximum Operating Temperature :
Package / Case :
Packaging : Tray


Features:

· High power gain
· Low noise figure
· Easy power control
· Good thermal stability
· Withstands full load mismatch.



Specifications

SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
VDS drain-source voltage 65 V
VGS gate-source voltage 20 V
ID DC drain current 6 A
Ptot total power dissipation up to Tmb = 25 C; total device;both sections equally loaded 68 W
Tstg storage temperature -65 150 C
Tj junction temperature 200 C



Description

Silicon N-channel enhancement mode vertical D-MOS transistor BLF245 designed for large signal amplifier applications in the VHF frequency range.

The transistor BLF245 is encapsulated in a 4-lead SOT123 flange envelope, with a ceramic cap. All leads are isolated from the flange.

Matched gate-source voltage (VGS) groups are available on request.




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