Specifications SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VDS drain-source voltage 65 V VGS gate-source voltage 20 V ID DC drain current 25 A Ptot total power dissipation up to Tmb = 25 C; total device;both sections equally loaded ...
BLF348: Specifications SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VDS drain-source voltage 65 V VGS gate-source voltage 20 V ID DC drain current 25...
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SYMBOL | PARAMETER | CONDITIONS | MIN. | MAX. | UNIT |
VDS | drain-source voltage | 65 | V | ||
VGS | gate-source voltage | 20 | V | ||
ID | DC drain current | 25 | A | ||
Ptot | total power dissipation | up to Tmb = 25 C; total device;both sections equally loaded | 500 | W | |
Tstg | storage temperature | -65 | 150 | C | |
Tj | junction temperature | 200 | C | ||
Dual push-pull silicon N-channel enhancement mode vertical D-MOS transistor BLF348, designed for broadcast transmitter applications in the VHF frequency range.
The BLF348 is encapsulated in a 4-lead, SOT262 A1 balanced flange envelope, with two ceramic caps. The mounting flange provides the common source connection for the transistors.