BLF346

Configuration : Single
Transistor Polarity : N-Channel
Maximum Operating Temperature : + 150 C
Drain-Source Breakdown Voltage : 65 V
Gain : 16.5 dB
Gate-Source Breakdown Voltage : +/- 20 V
Packaging : Bulk
Continuous Drain Current : 13 A
Output Power : 30 W
Frequency : 224.25 MHz
Package / Case : SOT-119A


Features:

· High power gain
· Easy power control
· Good thermal stability
· Gold metallization ensures excellent reliability.


Application

· Linear amplifier applications in Television transmitters and transposers.


Specifications

SYMBOL	PARAMETER	CONDITIONS	MIN.	MAX.	UNIT
VDS	drain-source voltage			65	V
VGS	gate-source voltage			±20	V
ID	DC drain current			13	A
Ptot	total power dissipation	up to Tmb = 25  C;		130	W
Tstg	storage temperature		-65	150	C
Tj	junction temperature			200	C

Description

Silicon N-channel enhancement mode vertical D-MOS transistor BLF346 encapsulated in a 6-lead, SOT119 flange package, with a ceramic cap. All leads are isolated from the flange. A marking code, showing gate-source voltage (VGS) information is provided for matched pair applications. Refer to the General Section of Data Handbook SC19a for further information about BLF346.