BLF368

Transistor Polarity : N-Channel
Maximum Operating Temperature : + 150 C
Configuration : Dual
Drain-Source Breakdown Voltage : 65 V
Output Power : 300 W
Gate-Source Breakdown Voltage : +/- 20 V
Packaging : Bulk
Continuous Drain Current : 25 A
Frequency : 225 MHz
Package / Case : SOT-262 A1
Gain : 13.5 dB


Features:

* High power gain
* Easy power control
* Good thermal stability
* Gold metallization ensures excellent reliability.




Pinout






Specifications

SYMBOL	PARAMETER	CONDITIONS	MIN.	MAX.	UNIT
VDS	drain-source voltage			65	V
VGS	gate-source voltage			±20	V
ID	DC drain current			25	A
Ptot	total power dissipation	up to Tmb = 25 C; total device;both sections equally loaded		500	W
Tstg	storage temperature		-65	150	C
Tj	junction temperature			200	C

Description

The BLF368 is a type of VHF push-pull power MOS transistor,which is designed for broadcast transmitter applications in the VHF frequency range. The transistor is encapsulated in a 4-lead SOT262A1 balanced flange package, with two ceramic caps. The mounting flange offers the common source combination for the transistors.

Features of the BLF368 are:(1)high power gain;(2)easy power control;(3)good thermal stability;(4)gold metallization ensures excellent reliability.

The limiting values and characteristics(Tj = 25 °C unless otherwise specified) of the BLF368 can be summarized as:(1):drain-source voltage is 65 V;(2): gate-source voltage is±20 V;(3):drain current (DC) is 25 A;(4):total power diss ipation is 500W when Tmb is 25°C or less than 25°C,both sections equally loaded; (5):storage temperature range s from-65°C to 150 °C;(6):junction temperature is 200°C.Characteristics:(1):drain-source breakdown voltage is 65V min when VGS is 0 and ID is 100 mA;(2):drain-source leakage current is 5mA when VGS is 0 and VDS is 32 V; (3):gate-source leakage current is 1uA when VGS is±20 V and VDS is 0;(4):gate-source threshold voltage is 2V min and 4.5V max when ID is 100 mA and VDS is 10 V;(5):gate-source voltage difference of both transistor sections is 10 0mV when ID is 100 mA and VDS is 10 V;(6):forward transconductance is 5S min and 7.5S typ when IDis 8 A and VDS is 10 V;(7)forward transconductance ratio of both transistor sections is 0.9 min and 1.1 max when
ID is 8 A and VDS is 10 V.etc.