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BLF244

Features: · High power gain· Low noise figure· Easy power control· Good thermal stability· Withstands full load mismatch· Gold metallization ensures excellent reliability.Specifications SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VDS drain-source voltage 65 V ...

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SeekIC No. : 004300554 Detail

BLF244: Features: · High power gain· Low noise figure· Easy power control· Good thermal stability· Withstands full load mismatch· Gold metallization ensures excellent reliability.Specifications ...

BLF244 Data Sheet

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Part Number:
BLF244
Supply Ability:
5000

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  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/12/21

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Product Details

Description



Features:

· High power gain
· Low noise figure
· Easy power control
· Good thermal stability
· Withstands full load mismatch
· Gold metallization ensures excellent reliability.


Specifications

SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
VDS drain-source voltage 65 V
VGS gate-source voltage 20 V
ID DC drain current 3 A
Ptot total power dissipation up to Tmb = 25  C; total device;both sections equally loaded 38 W
Tstg storage temperature -65 150 C
Tj junction temperature 200 C



Description

Silicon N-channel enhancement mode vertical D-MOS transistor BLF244 designed for large signal amplifier applications in the VHF frequency range.

The transistor BLF244 is encapsulated in a 4-lead SOT123 flange envelope, with a ceramic cap. All leads are isolated from the flange.

Matched gate-source voltage (VGS) groups are available on request.




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