BLF548

Transistor Polarity : N-Channel
Maximum Operating Temperature : + 150 C
Configuration : Dual
Drain-Source Breakdown Voltage : 65 V
Gate-Source Breakdown Voltage : +/- 20 V
Output Power : 150 W
Packaging : Bulk
Frequency : 500 MHz
Continuous Drain Current : 15 A
Gain : 11 dB
Package / Case : SOT-262 A2


Features:

· High power gain
· Easy power control
· Good thermal stability
· Gold metallization ensures excellent reliability
· Designed for broadband operation.




Pinout






Specifications

SYMBOL	PARAMETER	CONDITIONS	MIN.	MAX.	UNIT
VDS	drain-source voltage			65	V
VGS	gate-source voltage			±20	V
ID	DC drain current			15	A
Ptot	total power dissipation	up to Tmb = 25 C; total device;both sections equally loaded		330	W
Tstg	storage temperature		-65	+150	C
Tj	junction temperature			200	C

Description

The BLF548 has five features.(1)high power gain.(2)easy power control.(3)good thermal stability.(4)gold metallization ensures excellent reliability.(5)designed for broadband operation.

The BLF548 is capable of withstanding a load mismatch corresponding to VSWR = 10: 1 through all phases under the following conditions: VDS = 28 V; f = 500 MHz at rated output power.The BLF548 has two thermal characteristics.(1):the symbol is Rth j-mb,the parameter of BLF548 is thermal resistance from junction to mounting base,the conditions is Tmb = 25 ; Ptot = 330 W; total device;both sections equally loaded,the value is 0.5,the unit is k/W;(2):the symbol is Rth mb-h,the parameter is thermal resistance from mounting base to heatsink,the conditions is total device; both sections equally loaded,the value is 0.15,the unit is k/W;Dual push-pull silicon N-channel enhancement mode vertical D-MOS transistor designed for communications transmitter applications in the UHF frequency range.The transistor is encapsulated in a 4-lead, SOT262A2 balanced flange package, with two ceramic caps. The mounting flange provides the common source connection for the transistors.This product is supplied in anti-static packing to prevent damage caused by electrostatic discharge during transport and handling. For further information,refer to Philips specs.: SNW-EQ-608, SNW-FQ-302A, and SNW-FQ-302B.

BLF548 contains beryllium oxide. The product is entirely safe provided that the BeO discs are not damaged. All persons who handle, use or dispose of this product should be aware of its nature and of the necessary safety precautions. After use, dispose of as chemical or special waste according to the regulations applying at the location of the user. It must never be thrown out with the general or domestic waste.All rights of BLF548 are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner.The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of BLF548 use. Publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights.