BLF6G20LS-110

Frequency :
Gain :
Output Power :
Configuration : Single
Transistor Polarity : N-Channel
Maximum Operating Temperature : + 150 C
Drain-Source Breakdown Voltage : 65 V
Packaging : Tube
Gate-Source Breakdown Voltage : 13 V
Package / Case : SOT502B
Continuous Drain Current : 29 A


Features:

·  Typical 2-carrier W-CDMA performance at frequencies of 1930 MHz and 1990 MHz, a supply voltage of 28 V and an I_Dq of 900 mA:
   ·  Average output power = 25 W
   ·  Power gain = 19 dB
   ·  Efficiency = 31 %
   ·  IMD3 = -37 dBc
   · ACPR = -40 dBc
·  Easy power control
·  Integrated ESD protection
·  Excellent ruggedness
·  High efficiency
·  Excellent thermal stability
·  Designed for broadband operation (1800 MHz to 2000 MHz)
·  Internally matched for ease of use
·  Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances (RoHS)


Application

·  RF power amplifiers for GSM, GSM EDGE, W-CDMA and CDMA base stations and multicarrier applications in the 1800 MHz to 2000 MHz frequency range


Pinout

Specifications

Symbol	Parameter	Conditions	Min	Max	Unit
VDS	drain-source voltage		-	65	V
VGS	gate-source voltage		-0.5	+13	V
ID	drain current		-	29	A
Tstg	storage temperature		-65	+150
Tj	junction temperature		-	225

Description

110 W LDMOS power transistor BLF6G20LS-110 for base station applications at frequencies from 1800 MHz to 2000 MHz.