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BLF2022-90

Features: * Typical W-CDMA performance at a supply voltage of 28 V and IDQ of 750 mA: Output power = 11.5 W (AV) Gain = 12.5 dB Efficiency = 20% ACPR = -42 dBc at 3.84 MHzdim = -36 dBc* Easy power control* Excellent ruggedness* High power gain* Excellent thermal stability* Designed for broadband o...

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BLF2022-90: Features: * Typical W-CDMA performance at a supply voltage of 28 V and IDQ of 750 mA: Output power = 11.5 W (AV) Gain = 12.5 dB Efficiency = 20% ACPR = -42 dBc at 3.84 MHzdim = -36 dBc* Easy power c...

BLF2022-90 Data Sheet

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Part Number:
BLF2022-90
Supply Ability:
5000

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  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Description



Features:

* Typical W-CDMA performance at a supply voltage of 28 V and IDQ of 750 mA:
Output power = 11.5 W (AV)
Gain = 12.5 dB
Efficiency = 20%
ACPR = -42 dBc at 3.84 MHz
dim = -36 dBc
* Easy power control
* Excellent ruggedness
* High power gain
* Excellent thermal stability
* Designed for broadband operation (2000 to 2200 MHz)
* Internally matched for ease of use.


Application

* RF power amplifiers for W-CDMA base stations and multicarrier applications in the 2000 to 2200 MHz frequency range.


Pinout

Connection Diagram


Specifications

SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
VDS drain-source voltage 65 V
VGS gate-source voltage ±15 V
ID DC drain current 12 A
Tstg storage temperature -65 150 C
Tj junction temperature 200 C



Description

90 W LDMOS power transistor BLF2022-90 for base station applications at frequencies from 2000 to 2200 MHz.


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