BLF246

Features:

· High power gain
· Low noise figure
· Easy power control
· Good thermal stability
· Withstands full load mismatch.


Application

· Large signal amplifier applications in the VHF frequency range.


Specifications

SYMBOL	PARAMETER	CONDITIONS	MIN.	MAX.	UNIT
VDS	drain-source voltage			65	V
VGS	gate-source voltage			±20	V
ID	DC drain current			13	A
Ptot	total power dissipation	up to Tmb = 25  C; total device;both sections equally loaded		130	W
Tstg	storage temperature		-65	150	C
Tj	junction temperature			200	C

Description

Silicon N-channel enhancement mode vertical D-MOS transistor BLF246 encapsulated in a 4-lead, SOT121 flange package, with a ceramic cap. All leads are isolated from the flange. A marking code of BLF246, showing gate-source voltage (VGS) information is provided for matched pair applications. Refer to the General section of Data Handbook SC19a for further information.