Transistors RF MOSFET Power BULK TNS-RFPR
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Configuration : | Dual | Transistor Polarity : | N-Channel |
Frequency : | 500 MHz | Gain : | 13 dB |
Output Power : | 80 W | Drain-Source Breakdown Voltage : | 65 V |
Continuous Drain Current : | 9 A | Gate-Source Breakdown Voltage : | +/- 20 V |
Maximum Operating Temperature : | + 150 C | Package / Case : | SOT-268A |
Packaging : | Bulk |
SYMBOL | PARAMETER | CONDITIONS | MIN. | MAX. | UNIT |
VDS | drain-source voltage | 65 | V | ||
VGS | gate-source voltage | 20 | V | ||
ID | DC drain current | 9 | A | ||
Ptot | total power dissipation | up to Tmb =25 °C; total device; both sections equally loaded |
125 | W | |
Tstg | storage temperature | -65 | 150 | C | |
Tj | junction temperature | 200 | C | ||
The BLF546 is a type of UHF push-pull powewr mos transistor.Silicon N-channel enhancement mode vertical D-MOS push-pull transistor applied for communications transmitter applications in the UHF frequency range. The transistor BLF546 is encapsulated in a 4-lead, SOT268 balanced flange envelope, with two ceramic caps. The mounting flange offers the common source connection for the transistors.
The BLF546 has the following features:(1)High power gain;(2)Easy power control;(3)Good thermal stability;(4)Gold metallization ensures,excellent reliability;(5)Designed for broadband operation.
BLF546 also has some outstanding limiting values(In accordance with the absolute maximum System ,Per transistor of BLF546 secti on unless otherwise specified.) and electrical characteristics(Tj=25°C).Absolute maximum ratings:(1):drain-source voltage is 65 V max;(2):gate-source voltage is 20 V max;(3):drain current is 9 A max;(4): total power dissipation is 145 W max(up to Tmb = 25 °C; total device;both sections equally loaded);(5): storage temperature is 65 to 150 °C;(6): junction temperature is 200 °C max.characteristics:(1):drain-source breakdown voltage is 65 V min when VGS is 0 and ID is 20 mA;(2):drain-source leakage current is 2 mA max when VGS is 0 and VDS is 28 V;(3): gate-sour ce leakage current is 1 mA max when ±VGS is 20 V and VDS is 0 ;(4): gate-source threshold voltage is 1 V min and 4 V max when ID is 80 mA and VDS is 10 V;(5):forward transconductance is 1.2 s min and 1.7 s typ when ID is 2.4 A and VDS is 10 V;(6):drain-source on-state resistance is 0.4 typ and 0.6 max when ID is 2.4 An and VGS is 10 V;(7):on-state drain current is 10 A typ when VGS is 15 V and VDS is 10 V;(8): input capacitance is 60 pF when VGS is 0 , VDS is 28 V and f is 1 MHz;(9): output capacitance is 46 pF when VGS is 0, VDS is 28 V and f is 1 MHz.etc.