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Mfg:PHILIPS Pack:SMD D/C:2008+ Vendor:Other Category:Other
Mfg:PHILIPS Pack:SOT-23 D/C:07+ Vendor:Other Category:Other
Vendor:Other Category:Other
Mfg:N/A Pack:NA/ D/C:09+ Vendor:Other Category:Other
Symmetrical n-channel silicon epitaxial planar junction field-effect transistor BFT46 in a microminiature plastic envelope. The transistor is intended for low level general purpose amplifiers in thick and thin-film circu...
Mfg:PHILIPS Pack:CAN3 D/C:05+ Vendor:Other Category:Other
PNP high-voltage transistor BFT45 in a TO-39 metal package.
Mfg:PHI D/C:07+ Vendor:Other Category:Other
The BFT25A is a silicon npn transistor, primarily intended for use in RF low power amplifiers, such as pocket telephones and paging systems with signal frequencies up to 2 GHz.The transistor BFT25A is encapsulated in a 3...
Mfg:PHILIPS Pack:SMD D/C:2008+ Vendor:Other Category:Other
NPN transistor BFT25 in a plastic SOT23 envelope.BFT25 is primarily intended for use in RF low power amplifiers, such as in pocket phones, paging systems, etc. The transistor features low current consumption (100 µ...
Vendor:Other Category:Other
Vendor:Other Category:Other
Vendor:Other Category:Other
Vendor:Other Category:Other
Vendor:Other Category:Other
The BFS67 features are as follows:
`Low Noise Figure NF = 4.5 dB TYP. @VCE = 5 V, IC = 2 mA, f = 500 MHz`High Current-Gain-Bandwidth Product fT= 1 GHz TYP. @VCE = 5 V, IC = 2 mA, f = 500 MHz
Mfg:PHILIPS Pack:SOT323 D/C:07+ Vendor:Other Category:Other
NPN transistor BFS540 in a plastic SOT323 envelope.BFS540 is intended for RF wideband amplifier applications such as satellite TV systems and RF portable communication equipment with signal frequencies up to 2 GHz.
Vendor:Other Category:Other
NPN transistor BFS520 in a plastic SOT323 envelope.BFS520 is intended for wideband applications such as satellite TV tuners, cellular phones, cordless phones, pagers etc., with signal frequencies up to 2 GHz.
Mfg:N/A Pack:NA/ D/C:09+ Vendor:Other Category:Other
NPN transistor BFS505 in a plastic SOT323 envelope.BFS505 is intended for low power amplifiers,oscillators and mixers particularly in RF portable communication equipment (cellular phones, cordless phones, pagers) up to 2...
Mfg:INFINEON D/C:08+ Vendor:Other Category:Other
Mfg:INFINEON Pack:SOT363 D/C:2004 Vendor:Other Category:Other
Mfg:INFINEON Pack:SOT363 D/C:2004 Vendor:Other Category:Other
Mfg:INFINEON Pack:SOT363 D/C:2004 Vendor:Other Category:Other
Vendor:Other Category:Other
Mfg:infinen Pack:45000 D/C:07+ Vendor:Other Category:Other
Mfg:MOT/PHIL D/C:08+ Vendor:Other Category:Other
NPN transistor BFS25A in a plastic SOT323 envelope.BFS25A is designed for use in RF amplifiers and oscillators in pagers and pocket phones with signal frequencies up to 2 GHz.
Mfg:PHILIPS Pack:SOT323 D/C:01+ Vendor:Other Category:Other
NPN medium frequency transistor BFS20W in a SOT323 (SC-70) plastic package.
Vendor:Other Category:Other
Mfg:PHILIPS D/C:06+ Vendor:Other Category:Other
Mfg:INFINEON Pack:SOT323 D/C:07+ Vendor:Other Category:Other
Electrostatic sensitive device BFS17W. Observe precautions for handling.
Mfg:INFINEON Pack:SOT-363 Vendor:Other Category:Other
BFS17S features is for or broadband amplifiers up to 1 GHz at collector currents from 1 mA to 20 mA
Mfg:VISHAY Pack:SOT23-3 D/C:04+ Vendor:Other Category:Other
The BFS17R is Electrostatic sensitive device. Observe precautions for handling.
Vendor:Other Category:Other
BFS17P E6327 is a kind of NPN silicon RF transistor which has two unique features: The first one is for broadband amplifiers up to 1 GHz at collector current from 1 mA to 20 mA. The second one is CECC-type available: CE...
Vendor:Other Category:Other
Mfg:ONSorola Pack:06+ Vendor:Other Category:Other
Vendor:Other Category:Other
Mfg:Philips Pack:Sot-323 D/C:09+ Vendor:Other Category:Other
The BFS17AW features are as follows:
Electrostatic sensitive device. Observe precautions for handling.
Vendor:Other Category:Other
The BFS17AR features are as follows:
Electrostatic sensitive device. Observe precautions for handling.
Mfg:PHILIPS Pack:SOT23 D/C:06+ Vendor:Other Category:Other
The BFS17A features are as follows:
Electrostatic sensitive device. Observe precautions for handling.
Mfg:PHILIPS Pack:SOT-23 D/C:06+ Vendor:Other Category:Other
Electrostatic sensitive device BFS17. Observe precautions for handling.
Vendor:Other Category:Other
Vendor:Other Category:Other
Mfg:N/A Pack:NA/ D/C:09+ Vendor:Other Category:Other
Mfg:PH D/C:92+ Vendor:Other Category:Other
Mfg:PHI D/C:07+ Vendor:Other Category:Other
The BFR96 is designed primarily for use in high-gain, low noise, small-signal amplifiers. Also used in applications requiring fast switching times.
Mfg:PHL Vendor:Other Category:Other
NPN resistance-stabilized transistor BFR94A in a SOT122E capstan envelope. It features extremely low cross modulation, intermodulation and second order intermodulation distortion. Due to its high transition frequency, it...
Mfg:Infineon Pack:SC75 D/C:04+ Vendor:Other Category:Other
Vendor:Other Category:Other
Mfg:Infineon Pack:TSLP-3/0603 Vendor:Other Category:Other
Mfg:PHILIPS Pack:SOT23 D/C:06+ Vendor:Other Category:Other
Vendor:Other Category:Other
Mfg:PHILIPS Pack:SOT416 D/C:00+ Vendor:Other Category:Other
Mfg:SIEMIENS Pack:SOT23 D/C:06+ Vendor:Other Category:Other
The BFR93A/BFR93AR is an NPN silicon epitaxial transistor designed for low noise amplifier at VHF, UHF and CATV band.BFR93AR has dynamic range and good current characteristic.This small-signal transistor BFR93AR in 3-Pin...
Vendor:Other Category:Other
Vendor:Other Category:Other
The BFR93A is designed as one kind of NPN wideband silicon germanium RF transistor,and the NPN silicon germanium microwave transistor for low-noise, high-gain broadband amplifiers at collector currents from 2 mA to 30 mA...
Mfg:PHI Pack:SOT-23 Vendor:Other Category:Other
Mfg:Infineon Pack:SOT-323 D/C:2005 Vendor:Other Category:Other
Mfg:Infineon D/C:05+ Vendor:Other Category:Other
Mfg:PHILIPS Pack:06+ D/C:SOT23R Vendor:Other Category:Other
Vendor:Other Category:Other
Mfg:PHILIPS Pack:323 Vendor:Other Category:Other
Mfg:PHI Vendor:Other Category:Other
Silicon NPN transistor encapsulated in a plastic SOT416 (SC-75) package The BFR92AT uses the same crysta as the SOT23 version: BFR92A.
Mfg:VISHAY Pack:SOT-23 D/C:2002 Vendor:Other Category:Other
Mfg:MOT Pack:SOT-23 D/C:99 Vendor:Other Category:Other
Vendor:Other Category:Other
The main purpose of this bipolar transistor BFR92AF is broadband amplification up to 1 GHz. In the space-saving 3-pin surface-mount SOT-490 package electrical performance and reliability are taken to a new level covering...
Vendor:Other Category:Other
The BFR92A is designed as one kind of NPN wideband transistor with some features such as:(1)RF wideband amplifier/oscillator;(2)5GHz transition frequency;(3)low intermodulation distortion;(4)high power gain;(5)low noise....
Pack:SOT-23 Vendor:Other Category:Other
Mfg:SIE Vendor:Other Category:Other
Mfg:PHILIPS Pack:CAN4 D/C:05+ Vendor:Other Category:Other
BFR91 is Designed primarily for use in high-gain, low noise, small-signal amplifiers. Also used in applications requiring fast switching times.
Vendor:Other Category:Other
Vendor:Other Category:Other
Designed BFR90 primarily for use in high-gain, low noise, small-signal amplifiers. Also used in applications requiring fast switching times.
Mfg:DSI D/C:n/a Vendor:Other Category:Other
Mfg:MOT / PH D/C:08+ Vendor:Other Category:Other
The ASI BRF65 is designed for 20 V Large-Signal RF Amplifier Applications.
Vendor:Other Category:Other
The BFR540 is an npn silicon planar epitaxial transistor, intended for applications in the RF frontend in wideband applications in the GHz range, such as analog and digital cellular telephones, cordless telephones (CT1, ...
Vendor:Other Category:Other
NPN medium frequency transistor BFR54 in a TO-92; SOT54 plastic package.
Mfg:PHILIPS Pack:SOT23 D/C:03+ Vendor:Other Category:Other
NPN wideband transistor BFR53 in a plastic SOT23 package.
Mfg:PHILIPS Pack:SOT416 D/C:01+ Vendor:Other Category:Other
NPN transistor BFR520T in a plastic SOT416 (SC75) envelope.It is intended for wideband applications such as satellite TV tuners, cellular phones, cordless phones, pagers etc., with signal frequencies up to 2 GHz.
Vendor:Other Category:Other
The BFR520 is an npn silicon planar epitaxial transistor, intended for applications in the RF frontend in wideband applications in the GHz range, such as analog and digital cellular telephones, cordless telephones (CT1, ...
Mfg:Philip D/C:07+ Vendor:Other Category:Other
NPN transistor BFR505T in a plastic SOT416 (SC-75) package.
Mfg:N/A Pack:N/A D/C:09+ Vendor:Other Category:Other
The BFR505 is an npn silicon planar epitaxial transistor, intended for applications in the RF frontend in wideband applications in the GHz range, such as analog and digital cellular telephones, cordless telephones (CT1, ...
Vendor:Other Category:Other
Mfg:INFINEON Pack:06+ D/C:SC75 Vendor:Other Category:Other
Vendor:Other Category:Other
BFR380L3 E6327 is a type of NPN silicon RF transistor which has four unique features: (1)high current capability and low figure for wide dynamic range application;(2) low voltage operation;(3)it is ideal for low phase no...
Mfg:PANASONI.. Pack:00+ D/C: Vendor:Other Category:Other
Vendor:Other Category:Other
The BFR380F E6327 is a type of NPN silicon RF transistor which has four unique features: (1)high current capability and low figure for wide dynamic range application;(2) low voltage operation;(3)it is ideal for low phas...
Mfg:INFINEON Pack:TSFP-3 D/C:2008+ Vendor:Other Category:Other
Mfg:75000 Pack:INFINEON D/C:03+ Vendor:Other Category:Other
Vendor:Other Category:Other
Mfg:Infineon D/C:07+ Vendor:Other Category:Other
Vendor:Other Category:Other
Mfg:Infineon Pack:SC75 D/C:2004 Vendor:Other Category:Other
Vendor:Other Category:Other
Mfg:INFINEON Pack:TSFP-3 D/C:2008+ Vendor:Other Category:Other
Mfg:ON D/C:06+ Vendor:ON Semiconductor Category:Discrete Semiconductor Products
TRANS JFET N-CH 25V 225MW SOT-23
Mfg:IOR Pack:TO23 D/C:07+ Vendor:Other Category:Other
Planar epitaxial symmetrical junction N-channel field-effect transistor BFR31 in a plastic SOT23 package.
Mfg:PHILIPS Pack:SMD D/C:2008+ Vendor:ON Semiconductor Category:Discrete Semiconductor Products
TRANS JFET N-CH 25V 225MW SOT-23
Mfg:PHI Pack:SOT-23 Vendor:Other Category:Other
Planar epitaxial symmetrical junction N-channel field-effect transistor BFR30 in a plastic SOT23 package.
Mfg:INFINEON Vendor:Other Category:Other
Mfg:VISHAY Pack:06+ D/C:- Vendor:Other Category:Other
Mfg:VISHAY Pack:SOT-23 D/C:07+(ROHS) Vendor:Other Category:Other
Mfg:Infineon Pack:SOT23 D/C:2005 Vendor:Other Category:Other
Mfg:Infineon Pack:SOT-323 D/C:2005 Vendor:Other Category:Other
Pack:12000 D/C:07+ Vendor:Other Category:Other
The main purpose of this bipolar transistor BFR193TF is broadband amplification up to 2 GHz. In the space-saving 3-pin surface-mount SOT-490 package electrical performance and reliability are taken to a new level coverin...
Mfg:INFINEON Pack:06+ D/C:SC75 Vendor:Other Category:Other
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