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BFT25A

Features: • Low current consumption (100 µA − 1 mA)• Low noise figure• Gold metallization ensures excellent reliability.ApplicationThese products are not designed for use in life support appliances, devices, or systems where malfunction of these roducts can reasonably...

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SeekIC No. : 004299964 Detail

BFT25A: Features: • Low current consumption (100 µA − 1 mA)• Low noise figure• Gold metallization ensures excellent reliability.ApplicationThese products are not designed for u...

BFT25A Data Sheet

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Part Number:
BFT25A
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/11/21

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Product Details

Description



Features:

• Low current consumption (100 µA − 1 mA)
• Low noise figure
• Gold metallization ensures excellent reliability.


Application

These products are not designed for use in life support appliances, devices, or systems where malfunction of these roducts can reasonably be expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from  uch improper use or sale.




Specifications

SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
VCBO collector-base voltage open emitter − 8 V
VCEO collector-emitter voltage open base − 5 V
VEBO emitter-base voltage open collector − 2 V
IC collector current (DC)   − 6.5 mA
Ptot total power dissipation up to Ts = 165 °C;
note 1		 − 32 mW
Tstg storage temperature   −65 150
Tj junction temperature   − 175



Description

The BFT25A is a silicon npn transistor, primarily intended for use in RF low power amplifiers, such as pocket telephones and paging systems with signal frequencies up to 2 GHz.

The transistor BFT25A is encapsulated in a 3-pin plastic SOT23 envelope.




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