ApplicationThese products are not designed for use in life support appliances, devices, or systems where malfunction of these roducts can reasonably be expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and ...
BFT25: ApplicationThese products are not designed for use in life support appliances, devices, or systems where malfunction of these roducts can reasonably be expected to result in personal injury. Philips...
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These products are not designed for use in life support appliances, devices, or systems where malfunction of these roducts can reasonably be expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale.
SYMBOL | PARAMETER | CONDITIONS | MIN. | MAX. | UNIT |
VCBO | collector-base voltage | open emitter | − | 8 | V |
VCEO | collector-emitter voltage | open base | − | 5 | V |
VEBO | emitter-base voltage | open collector | − | 2 | V |
IC | collector current (DC) | − | 6.5 | mA | |
ICM | peak collector current | f > 1 MHz | − | 10 | mA |
Ptot | total power dissipation | up to Ts = 167 °C; note 1 | − | 30 | mW |
Tstg | storage temperature | −65 | 150 | ||
Tj | junction temperature | − | 175 |
Note
1. Ts is the temperature at the soldering point of the collector tab.
NPN transistor BFT25 in a plastic SOT23 envelope.
BFT25 is primarily intended for use in RF low power amplifiers, such as in pocket phones, paging systems, etc. The transistor features low current consumption (100 µA to 1 mA); due to its high transition frequency, it also has excellent wideband properties and low noise up to high frequencies.