BFT25

ApplicationThese products are not designed for use in life support appliances, devices, or systems where malfunction of these roducts can reasonably be expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and ...

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BFT25 Picture
SeekIC No. : 004299963 Detail

BFT25: ApplicationThese products are not designed for use in life support appliances, devices, or systems where malfunction of these roducts can reasonably be expected to result in personal injury. Philips...

floor Price/Ceiling Price

Part Number:
BFT25
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Month Sales

268 Transactions

Rating

evaluate  (4.8 stars)

Upload time: 2024/12/21

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Product Details

Description



Application

These products are not designed for use in life support appliances, devices, or systems where malfunction of these roducts can reasonably be expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale.




Specifications

SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
VCBO collector-base voltage open emitter 8 V
VCEO collector-emitter voltage open base 5 V
VEBO emitter-base voltage open collector 2 V
IC collector current (DC)   6.5 mA
ICM peak collector current   f > 1 MHz 10 mA
Ptot total power dissipation up to Ts = 167 °C; note 1 30 mW
Tstg storage temperature   −65 150
Tj junction temperature   175

Note
1. Ts is the temperature at the soldering point of the collector tab.




Description

NPN transistor BFT25 in a plastic SOT23 envelope.

BFT25 is primarily intended for use in RF low power amplifiers, such as in pocket phones, paging systems, etc. The transistor features low current consumption (100 µA to 1 mA); due to its high transition frequency, it also has excellent wideband properties and low noise up to high frequencies.




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