Features: ·For low noise, high-gain broadband amplifiers at collector currents from 1 mA to 20 mA· fT = 9 GHz F = 1 dB at 1 GHzSpecifications Parameter Symbol Value Unit Collector-emitter voltage VCEO 10 V Collector-emitter voltage VCES 20 Collector-base volta...
BFR949F: Features: ·For low noise, high-gain broadband amplifiers at collector currents from 1 mA to 20 mA· fT = 9 GHz F = 1 dB at 1 GHzSpecifications Parameter Symbol Value Unit Collector-e...
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·For low noise, high-gain broadband amplifiers at collector currents from 1 mA to 20 mA
· fT = 9 GHz
F = 1 dB at 1 GHz
Parameter |
Symbol |
Value |
Unit |
Collector-emitter voltage |
VCEO |
10 |
V |
Collector-emitter voltage |
VCES |
20 | |
Collector-base voltage |
VCBO |
20 | |
Emitter-base voltage |
VEBO |
1.5 | |
Collector current |
IC |
35 |
mA |
Base current |
IB |
4 | |
Total power dissipationTS 93°C1) |
Ptot |
250 |
mW |
Junction temperature |
Tj |
150 |
°C |
Ambient temperature |
TA |
65 . 150 | |
Storage temperature |
Tstg |
65 . 150 | |
Thermal Resistance | |||
Junction - soldering point2) |
RthJS |
225 |
K/W |
1TS is measured on the collector lead at the soldering point to the pcb
2For calculation of RthJA please refer to Application Note Thermal Resistance