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BFR520T

Features: • High power gain• Low noise figure• High transition frequency• Gold metallization ensures excellent reliability• SOT416 (SC75) envelope.Specifications SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VCBO collector-base voltage open emitter −...

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BFR520T: Features: • High power gain• Low noise figure• High transition frequency• Gold metallization ensures excellent reliability• SOT416 (SC75) envelope.Specifications S...

BFR520T Data Sheet

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Part Number:
BFR520T
Supply Ability:
5000

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  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/12/21

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Product Details

Description



Features:

• High power gain
• Low noise figure
• High transition frequency
• Gold metallization ensures excellent reliability
• SOT416 (SC75) envelope.


Specifications

SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
VCBO collector-base voltage open emitter − 20 V
VCEO collector-emitter voltage RBE =0 − 15 V
VEBO emitter-base voltage open collector − 2.5 V
IC collector current (DC)   − 70 mA
Ptot total power dissipation up to Ts = 118 °C; note 1 − 300 mW
Tstg storage temperature   −65 150
Tj junction temperature   − 175
Note
1. Ts is the temperature at the soldering point of the collector tab.


Description

NPN transistor BFR520T in a plastic SOT416 (SC75) envelope.It is intended for wideband applications such as satellite TV tuners, cellular phones, cordless phones, pagers etc., with signal frequencies up to 2 GHz.




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