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BFR505

Features: • High power gain• Low noise figure• High transition frequency• Gold metallization ensures excellent reliability.Specifications SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VCBO collector-base voltage open emitter − 20 V VCEO collector-em...

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SeekIC No. : 004299894 Detail

BFR505: Features: • High power gain• Low noise figure• High transition frequency• Gold metallization ensures excellent reliability.Specifications SYMBOL PARAMETER CONDITIONS ...

BFR505 Data Sheet

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Part Number:
BFR505
Supply Ability:
5000

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  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/12/21

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Product Details

Description



Features:

• High power gain
• Low noise figure
• High transition frequency
• Gold metallization ensures excellent reliability.


Specifications

SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
VCBO collector-base voltage open emitter − 20 V
VCEO collector-emitter voltage RBE =0 − 15 V
VEBO emitter-base voltage   − 2.5 V
IC collector current (DC) continuous − 18 mA
Ptot total power dissipation up to Ts = 135 °C; note 1 − 150 mW
Tstg storage temperature   −65 150
Tj junction temperature   − 175



Description

The BFR505 is an npn silicon planar epitaxial transistor, intended for applications in the RF frontend in wideband applications in the GHz range, such as analog and digital cellular telephones, cordless telephones (CT1, CT2, DECT, etc.),radar detectors, pagers and satellite TV tuners (SATV).

The transistor BFR505 is encapsulated in a plastic SOT23 envelope.




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