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BFR505T

Features: • Low current consumption• High power gain• Low noise figure• High transition frequency• Gold metallization ensures excellent reliability• SOT416 (SC-75) package.ApplicationLow power amplifiers, oscillators and mixers particularly in RF portable commun...

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SeekIC No. : 004299895 Detail

BFR505T: Features: • Low current consumption• High power gain• Low noise figure• High transition frequency• Gold metallization ensures excellent reliability• SOT416 (SC-75...

BFR505T Data Sheet

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Part Number:
BFR505T
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/12/21

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Product Details

Description



Features:

• Low current consumption
• High power gain
• Low noise figure
• High transition frequency
• Gold metallization ensures excellent reliability
• SOT416 (SC-75) package.


Application

Low power amplifiers, oscillators and mixers particularly in RF portable communication equipment (cellular phones, cordless phones and pagers)up to 2 GHz.




Specifications

SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
VCBO collector-base voltage open emitter − 20 V
VCEO collector-emitter voltage RBE =0 − 15 V
VEBO emitter-base voltage open collector − 2.5 V
IC collector current (DC)   − 18 mA
Ptot total power dissipation Ts 75 °C; note 1 − 150 mW
Tstg storage temperature   −65 +150
Tj junction temperature   − 150
Note
1. Ts is the temperature at the soldering point of the collector pin.


Description

NPN transistor BFR505T in a plastic SOT416 (SC-75) package.


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