BFR93A

The BFR93A is designed as one kind of NPN wideband silicon germanium RF transistor,and the NPN silicon germanium microwave transistor for low-noise, high-gain broadband amplifiers at collector currents from 2 mA to 30 mA.

The absolute maximum ratings of the BFR93A can be summarized as:(1)collector-emitter voltage:12 V;(2)collector-emitter voltage:20 V;(3)collector-base voltage:20V;(4)emitter-base voltage:2V;(5)collector current:50 mA;(6)Base current:6 mA;(7)total power dissipation:300 mW;(8)junction temperature:150°C;(9)ambient temperature:-65 to 150°C;(10)storage temperature:-65 to 150°C.If you want to know more information such as the electrical characteristics about the BFR93A,please download the datasheet in www.seekdatasheet.com .