BFS17P E6327

BFS17P E6327  is a kind of NPN silicon RF transistor which has two unique features: The first one is for broadband amplifiers up to 1 GHz at collector current from 1 mA to 20 mA. The second one is CECC-type available: CECC 50002/248.

There are some maximum ratings of any single transistor.Collector-emitter voltage(VCEO) of BFS17P E6327 is 15 V.Collector-base voltage(VCBO) is 25 V.Emitter-base voltage(VEBO) is 2.5 V.Collector current(Ic) is 25 mA.Peak collector current(ICM,f is not slower than 10 MHz) is 50 mA. Total power dissipation(Ptot,Ts is not higher than 55°C) is 280 mW. Junction temperature(Tj) is 150°C.Ambient temperature(Ta) is -65°C to 150°C.Storage temperature is -65°C to 150°C.

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