BFR92AF

Features: • High power gain• Low noise figure• High transition frequencyApplicationWide band amplifier up to GHz range.PinoutSpecifications Parameter Test Conditions Symbol Value Unit Collector-base voltage VCBO 20 V Collector-emitter voltage ...

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BFR92AF Picture
SeekIC No. : 004299909 Detail

BFR92AF: Features: • High power gain• Low noise figure• High transition frequencyApplicationWide band amplifier up to GHz range.PinoutSpecifications Parameter Test Conditions Sym...

floor Price/Ceiling Price

Part Number:
BFR92AF
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/12/21

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Product Details

Description



Features:

• High power gain
• Low noise figure
• High transition frequency



Application

Wide band amplifier up to GHz range.


Pinout

  Connection Diagram


Specifications

Parameter
Test Conditions
Symbol
Value
Unit
Collector-base voltage
VCBO
20
V
Collector-emitter voltage
VCEO
15
V
Emitter-base voltage
VEBO
2
V
Continuous Current
IG
30
mA
Total power dissipation
Tamb 60
Ptot
200
mW
Junction temperature
Tj
150
Storage temperature range
Tj,Tstg
65 to +150




Description

The main purpose of this bipolar transistor BFR92AF is broadband amplification up to 1 GHz. In the space-saving 3-pin surface-mount SOT-490 package electrical performance and reliability are taken to a new level covering a smaller footprint on PC boards than previous packages. In addition to space savings, the SOT-490 provides a higher level of reliability than other 3-pin packages, such as more resistance to moisture. Due to the short length of its leads the SOT-490 is also reducing package inductances resulting in some better electrical performance. All of these aspects make this device an ideal choice for demanding RF applications.




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