BFR520 Selling Leads, Price trend, BFR520 DataSheet download, circuit diagram from SeekIC.com

Features: • High power gain• Low noise figure• High transition frequency• Gold metallization ensures excellent reliability.Specifications SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VCBO collector-base voltage open emitter − 20 V VCEO collector-em...

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SeekIC No. : 004299896 Detail

BFR520: Features: • High power gain• Low noise figure• High transition frequency• Gold metallization ensures excellent reliability.Specifications SYMBOL PARAMETER CONDITIONS ...

BFR520 Data Sheet

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Part Number:: BFR520
Supply Ability:: 5000

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1~5000

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Negotiable

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15 Days

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Upload time: 2024/11/23

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Recent History
What is this?

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Product Details

Description

Features:

• High power gain
• Low noise figure
• High transition frequency
• Gold metallization ensures excellent reliability.

Specifications

SYMBOL	PARAMETER	CONDITIONS	MIN.	MAX.	UNIT
V_CBO	collector-base voltage	open emitter	−	20	V
V_CEO	collector-emitter voltage	RBE =0	−	15	V
V_EBO	emitter-base voltage	open collector	−	2.5	V
I_C	collector current (DC)		−	70	mA
P_tot	total power dissipation	up to Ts =97 °C; note 1	−	300	mW
T_stg	storage temperature		−65	150
T_j	junction temperature		−	175

Description

The BFR520 is an npn silicon planar epitaxial transistor, intended for applications in the RF frontend in wideband applications in the GHz range, such as analog and digital cellular telephones, cordless telephones (CT1, CT2, DECT, etc.),radar detectors, pagers and satellite TV tuners (SATV) and repeater amplifiers in fibre-optic systems.

The transistor BFR520 is encapsulated in a plastic SOT23 envelope.

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BFR520

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