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BFR53

Features: · Very low intermodulation distortion· Very high power gain.Application· Thick and thin-film circuits.PinoutSpecifications SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VCBO collector-base voltage open emitter - 18 V VCEO collector-emitter voltage op...

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SeekIC No. : 004299898 Detail

BFR53: Features: · Very low intermodulation distortion· Very high power gain.Application· Thick and thin-film circuits.PinoutSpecifications SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT V...

BFR53 Data Sheet

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Part Number:
BFR53
Supply Ability:
5000

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  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/7/15

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Product Details

Description



Features:

· Very low intermodulation distortion
· Very high power gain.


Application

· Thick and thin-film circuits.


Pinout

Connection Diagram


Specifications

SYMBOL PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
VCBO collector-base voltage
open emitter

-
18
V
VCEO collector-emitter voltage
open base
-
10
V
VEBO emitter-base voltage
open collector
-
2.5
V
IC collector current (DC)
-
50
mA
ICM peak collector current
f > 1 MHz
-
100
mA
Ptot total power dissipation

Ts 85 °C (note 1)
-
250
W
Tstg storage temperature
-65
+150
°C
Tj junction temperature
-
150
°C


Note
1. Ts is the temperature at the soldering point of the collector pin.




Description

NPN wideband transistor BFR53 in a plastic SOT23 package.


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