Features: • Low noise figure• High transition frequency fT = 8 GHz• Excellent large-signal behaviour• Lead (Pb)-free component• Component in accordance to RoHS 2002/95/EC and WEEE 2002/96/ECApplicationFor low noise and high gain applications such as power amplifiers u...
BFR193TF: Features: • Low noise figure• High transition frequency fT = 8 GHz• Excellent large-signal behaviour• Lead (Pb)-free component• Component in accordance to RoHS 2002/95/...
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• Low noise figure
• High transition frequency fT = 8 GHz
• Excellent large-signal behaviour
• Lead (Pb)-free component
• Component in accordance to RoHS 2002/95/EC and WEEE 2002/96/EC
Parameter |
Test Conditions |
Symbol |
Value |
Unit |
Collector-base voltage |
VCBO |
20 |
V | |
Collector-emitter voltage |
VCEO |
12 |
V | |
Emitter-base voltage |
VEBO |
2 |
V | |
Continuous Current |
IG |
80 |
mA | |
Total power dissipation |
Tamb 45 |
Ptot |
420 |
mW |
Junction temperature |
Tj |
150 |
||
Storage temperature range |
Tj,Tstg |
65 to +150 |
The main purpose of this bipolar transistor BFR193TF is broadband amplification up to 2 GHz. In the space-saving 3-pin surface-mount SOT-490 package electrical performance and reliability are taken to a new level covering a smaller footprint on PC boards than previous packages. In addition to space savings, the SOT-490 provides a higher level of reliability than other 3-pin packages, such as more resistance to moisture. Due to the short length of its leads the SOT-490 is also reducing package inductances resulting in some better electrical performance. All of these aspects make this device an ideal choice for demanding RF applications.