BFR193TF

Features: • Low noise figure• High transition frequency fT = 8 GHz• Excellent large-signal behaviour• Lead (Pb)-free component• Component in accordance to RoHS 2002/95/EC and WEEE 2002/96/ECApplicationFor low noise and high gain applications such as power amplifiers u...

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BFR193TF Picture
SeekIC No. : 004299873 Detail

BFR193TF: Features: • Low noise figure• High transition frequency fT = 8 GHz• Excellent large-signal behaviour• Lead (Pb)-free component• Component in accordance to RoHS 2002/95/...

floor Price/Ceiling Price

Part Number:
BFR193TF
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/12/21

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Product Details

Description



Features:

• Low noise figure
• High transition frequency fT = 8 GHz
• Excellent large-signal behaviour
• Lead (Pb)-free component
• Component in accordance to RoHS 2002/95/EC and WEEE 2002/96/EC




Application

For low noise and high gain applications such as power amplifiers up to 2 GHz and for linear broadband amplifiers.


Pinout

  Connection Diagram


Specifications

Parameter
Test Conditions
Symbol
Value
Unit
Collector-base voltage
VCBO
20
V
Collector-emitter voltage
VCEO
12
V
Emitter-base voltage
VEBO
2
V
Continuous Current
IG
80
mA
Total power dissipation
Tamb 45
Ptot
420
mW
Junction temperature
Tj
150
Storage temperature range
Tj,Tstg
65 to +150



Description

The main purpose of this bipolar transistor BFR193TF is broadband amplification up to 2 GHz. In the space-saving 3-pin surface-mount SOT-490 package electrical performance and reliability are taken to a new level covering a smaller footprint on PC boards than previous packages. In addition to space savings, the SOT-490 provides a higher level of reliability than other 3-pin packages, such as more resistance to moisture. Due to the short length of its leads the SOT-490 is also reducing package inductances resulting in some better electrical performance. All of these aspects make this device an ideal choice for demanding RF applications.




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