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BFR949T

Features: · For low noise, high-gain broadband amplifiers at collector currents from 1 mA to 20 mA· fT = 9 GHz F = 1.0 dB at 1 GHzSpecifications Parameter Symbol Value Unit Collector-emitter voltage VCEO 10 V Collector-emitter voltage VCES 20 Collector-base vo...

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BFR949T: Features: · For low noise, high-gain broadband amplifiers at collector currents from 1 mA to 20 mA· fT = 9 GHz F = 1.0 dB at 1 GHzSpecifications Parameter Symbol Value Unit Collecto...

BFR949T Data Sheet

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Part Number:
BFR949T
Supply Ability:
5000

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  • 1~5000
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Product Details

Description



Features:

· For low noise, high-gain broadband amplifiers at collector currents from 1 mA to 20 mA
· fT = 9 GHz
    F = 1.0 dB at 1 GHz


Specifications

Parameter
Symbol
Value
Unit
Collector-emitter voltage
VCEO
10
V
Collector-emitter voltage
VCES
20
Collector-base voltage
VCBO
20
Emitter-base voltage
VEBO
1.5
Collector current
IC
70
mA
Base current
IB
7
Total power dissipationTS 75°C1)
Ptot
250
mW
Junction temperature
Tj
150
°C
Ambient temperature
TA
65 . 150
Storage temperature
Tstg
65 . 150
Thermal Resistance
Junction - soldering point2)
RthJS
300
K/W


1TS is measured on the collector lead at the soldering point to the pcb
2For calculation of RthJA please refer to Application Note Thermal Resistance




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