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BFS481

Features: · For low-noise, high-gain broadband amplifier at collector currents from 0.5 mA to 12 mA· fT = 8 GHz F = 1.4 dB at 900 MHz· Two (galvanic) internal isolated Transistors in one packageSpecifications PARAMETER SYMBOL VALUE UNIT Collector-Base Voltage VCBO 20 V Collector...

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BFS481: Features: · For low-noise, high-gain broadband amplifier at collector currents from 0.5 mA to 12 mA· fT = 8 GHz F = 1.4 dB at 900 MHz· Two (galvanic) internal isolated Transistors in one packageSpe...

BFS481 Data Sheet

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Part Number:
BFS481
Supply Ability:
5000

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Product Details

Description



Features:

· For low-noise, high-gain broadband amplifier    at collector currents from 0.5 mA to 12 mA
· fT = 8 GHz
   F = 1.4 dB at 900 MHz
· Two (galvanic) internal isolated
    Transistors in one package


Specifications

PARAMETER SYMBOL VALUE UNIT
Collector-Base Voltage VCBO 20 V
Collector-Emitter Voltage VCES 20
Collector-Emitter Voltage VCEO 12
Emitter-Base Voltage VEBO 2
Base current IB 2 mA
Collector current IC 20
Total power dissipation
TS 83 °C 1)		 Ptot 175 mW
Junction temperature Tj 150
Ambient temperature TA -65 ... 150
Storage temperature Tstg -65 ... 150
Thermal Resistance
Junction - soldering point2) RthJS 380 K/W
1TS is measured on the collector lead at the soldering point to the pcb
2For calculation of RthJA please refer to Application Note Thermal Resistance


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