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BFR31

Application· Low level general purpose amplifiers in thick and thin-film circuits.PinoutSpecifications SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VDS drain-source voltage - ±25 V VDGO drain-gate voltage open source - -25 V VGSO gate-source vol...

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BFR31: Application· Low level general purpose amplifiers in thick and thin-film circuits.PinoutSpecifications SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VDS drain-source voltage ...

BFR31 Data Sheet

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Part Number:
BFR31
Supply Ability:
5000

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  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Description



Application

· Low level general purpose amplifiers in thick and thin-film circuits.


Pinout

Connection Diagram


Specifications

SYMBOL PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
VDS drain-source voltage

-
±25
V
VDGO drain-gate voltage
open source
-
-25
V
VGSO gate-source voltage
open drain
-
-25
V
ID drain current
-
10
mA
IG forward gate current (DC)
-
5
mA
Ptot total power dissipation

Tamb 40 °C; note 1; see Fig.2
-
250
W
Tstg storage temperature
-65
+150
°C
Tj operating junction temperature
-
150
°C


Note
1. Mounted on a ceramic substrate of 8 * 10 * 0.7 mm.




Description

Planar epitaxial symmetrical junction N-channel field-effect transistor BFR31 in a plastic SOT23 package.


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