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BFS505

Features: • Low current consumption• High power gain• Low noise figure• High transition frequency• Gold metallization ensures excellent reliability• SOT323 envelope.Specifications SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VCBO collector-base volta...

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SeekIC No. : 004299955 Detail

BFS505: Features: • Low current consumption• High power gain• Low noise figure• High transition frequency• Gold metallization ensures excellent reliability• SOT323 envelo...

BFS505 Data Sheet

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Part Number:
BFS505
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/5/27

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Product Details

Description



Features:

• Low current consumption
• High power gain
• Low noise figure
• High transition frequency
• Gold metallization ensures excellent reliability
• SOT323 envelope.


Specifications

SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
VCBO collector-base voltage open emitter − 20 V
VCEO collector-emitter voltage RBE =0 − 15 V
VEBO emitter-base voltage open collector − 2.5 V
IC collector current (DC)   − 18 mA
Ptot total power dissipation up to Ts= 147 °C; note 1 − 150 mW
Tstg storage temperature   −65 150
Tj junction temperature   − 175



Description

NPN transistor BFS505 in a plastic SOT323 envelope.

BFS505 is intended for low power amplifiers,oscillators and mixers particularly in RF portable communication equipment (cellular phones, cordless phones, pagers) up to 2 GHz.




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