BFR380L3 E6327

BFR380L3 E6327 is a type of NPN silicon RF transistor which has four unique features: (1)high current capability and low figure for wide dynamic range application;(2) low voltage operation;(3)it is ideal for low phase noise oscillators up to 3.5 GHz;(4)low noise figure is 1.1 dB at 1.8 GHz.
 
There are some maximum ratings of BFR380L3 E6327 about it.Collector-emitter voltage(VCEO) is 6 V.Collector-emitter voltage(VCES) is 15 V.Collector-base voltage(VCBO) is 15 V.Emitter-base voltage(VEBO) is 2 V.Collector current(IC) is 80 mA.Base current(IB) is 14 mA.Total power dissipation(Ptot,TS is not higher than 96°C) is 380 mW.Junction temperature(Tj) is 150°C.Ambient temperature(TA) is -65°C to 150°C.Storage temperature(Tstg) is -65°C to 150°C.

Besides,there are some electrical characteristics of BFR380L3 E6327 at TA = 25°C, unless otherwise specified.Collector-emitter breakdown voltage(V(BR)CEO,IC = 1 mA, IB = 0) is 6V min and 9 V typ.Collector-emitter cutoff current(ICES,VCE = 15 V, VBE = 0) is 10 A max.Collector-base cutoff current(ICBO,VCB = 5 V, IE = 0) is 100 nA max.Emitter-base cutoff current(IEBO,VEB = 1 V, IC = 0) is 1 A max.DC current gain(hFE,Ic is 40 mA , Vce is 3 V) is 60 min,130 typ and 200 max.