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BLF276

Features: · High power gain· Easy power control· Good thermal stabilitySpecifications SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VDS drain-source voltage 110 V VGS gate-source voltage 20 V ID DC drain current 9 A Ptot total power diss...

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SeekIC No. : 004300558 Detail

BLF276: Features: · High power gain· Easy power control· Good thermal stabilitySpecifications SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VDS drain-source voltage 110 V ...

BLF276 Data Sheet

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Part Number:
BLF276
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/9/27

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Product Details

Description



Features:

· High power gain
· Easy power control
· Good thermal stability


Specifications

SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
VDS drain-source voltage 110 V
VGS gate-source voltage 20 V
ID DC drain current 9 A
Ptot total power dissipation up to Tmb = 25  C; total device;both sections equally loaded 150 W
Tstg storage temperature -65 150 C
Tj junction temperature 200 C



Description

Silicon N-channel enhancement mode vertical D-MOS transistor BLF276 designed for large signal amplifier applications in the VHF frequency range. The transistor delivers an output power of 100 W in class-B operation at a supply voltage of 50 V.

The transistor BLF276 is encapsulated in a 6-lead, SOT119 pill-package envelope, with a ceramic cap.




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