BLF2047

Features: * High power gain* Easy power control* Excellent ruggedness* Source on underside eliminates DC isolators, reducing common mode inductance* Designed for broadband operation (1.8 to 2.2 GHz).* Internal input and output matching for high gain and efficiencyApplication* Common source class-A...

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BLF2047 Picture
SeekIC No. : 004300549 Detail

BLF2047: Features: * High power gain* Easy power control* Excellent ruggedness* Source on underside eliminates DC isolators, reducing common mode inductance* Designed for broadband operation (1.8 to 2.2 GHz)...

floor Price/Ceiling Price

Part Number:
BLF2047
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/12/21

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Product Details

Description



Features:

* High power gain
* Easy power control
* Excellent ruggedness
* Source on underside eliminates DC isolators, reducing common mode inductance
* Designed for broadband operation (1.8 to 2.2 GHz).
* Internal input and output matching for high gain and efficiency



Application

* Common source class-AB operation for PCN and PCS applications in the 1800 to 2200 MHz frequency range.


Pinout

  Connection Diagram


Specifications

SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
VDS drain-source voltage 65 V
VGS gate-source voltage ±15 V
ID DC drain current 9 A
Tstg storage temperature -65 150 C
Tj junction temperature 200 C



Description

Silicon N-channel enhancement mode lateral D-MOS transistor BLF2047 encapsulated in a 2-lead flange SOT502A package with a ceramic cap. The common source is connected to the mounting flange.


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