BLF547

The BLF547 has five features.(1)high power gain.(2)easy power control.(3)good thermal stability.(4)gold metallization ensures excellent reliability.(5)designed for broadband operation.

Dual push-pull silicon N-channel enhancement mode vertical D-MOS transistor BLF547 designed for communications transmitter applications in the UHF frequency range.The transistor is encapsulated in a 4-lead, SOT262A2 balanced flange package, with two ceramic caps. The mounting flange provides the common source connection for the transistors. BLF547 is supplied in anti-static packing to prevent damage caused by electrostatic discharge during transport and handling. For further information,refer to Philips specs.: SNW-EQ-608, SNW-FQ-302A, and SNW-FQ-302B.

BLF547 contains beryllium oxide. The BLF547 is entirely safe provided that the BeO discs are not damaged. All persons who handle, use or dispose of this product should be aware of its nature and of the necessary safety precautions. After use, dispose of as chemical or special waste according to the regulations applying at the location of the user. It must never be thrown out with the general or domestic waste.All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner.The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights.