BLF578

Frequency :
Gain :
Output Power :
Transistor Polarity : N-Channel
Maximum Operating Temperature : + 150 C
Gate-Source Breakdown Voltage : 11 V
Packaging : Bulk
Drain-Source Breakdown Voltage : 110 V
Configuration : Dual Common Source
Package / Case : SOT502B
Continuous Drain Current : 88 A


Description

The BLF578 is designed as one kind of power LDMOS transistor for broadcast applications and industrial applications in the HF to 500 MHz band.Features of BLF578 are:(1)typical pulsed performance at frequency of 225 MHz, a supply voltage of 50 V and an IDq of 40 mA, a tp of 100 ms with d of 20 %:output power=1200 W,power gain=24 dB,efficiency=70 %;(2)easy power control;(3)integrated ESD protection;(4)excellent ruggedness;(5)high efficiency;(6)excellent thermal stability;(7)designed for broadband operation (10 MHz to 500 MHz);(8)compliant to directive 2002/95/EC, regarding restriction of hazardous substances(RoHS).

The BLF578 can be used in industrial, scientific and medical applications and broadcast transmitter applications.And the DC characteristics of it can be summarized as:(1)drain-source breakdown voltage:110 V;(2)gate-source threshold voltage:1.25 to 2.25 V;(3)drain leakage current:2.8 uA;(4)drain cut-off current:75 A;(5)gate leakage current:280 nA;(6)drain-source on-state resistance:0.07 ;(7)feedback capacitance:3 pF;(8)input capacitance:403 pF;(9)output capacitance:138 pF.If you want to know more information such as the electrical characteristics about the BLF578,please download the datasheet in www.seekdatasheet.com or www.chinaicmart.com.