BLF248

Transistor Polarity : N-Channel
Maximum Operating Temperature : + 150 C
Configuration : Dual
Drain-Source Breakdown Voltage : 65 V
Packaging : Tube
Output Power : 300 W
Gate-Source Breakdown Voltage : +/- 20 V
Continuous Drain Current : 25 A
Frequency : 225 MHz
Package / Case : SOT-262 A1
Gain : 10 dB


Features:

* High power gain
* Easy power control
* Good thermal stability
* Gold metallization ensures excellent reliability.


Pinout




Specifications

SYMBOL	PARAMETER	CONDITIONS	MIN.	MAX.	UNIT
VDS	drain-source voltage			65	V
VGS	gate-source voltage			20	V
ID	DC drain current			25	A
Ptot	total power dissipation	up to Tmb = 25  C; total device;both sections equally loaded		500	W
Tstg	storage temperature		-65	150	C

Description

Dual push-pull silicon N-channel enhancement mode vertical D-MOS transistor BLF248, designed for large signal amplifier applications in the VHF frequency range.

The transistor BLF248 is encapsulated in a 4-lead SOT262 A1 balanced flange envelope, with two ceramic caps. The mounting flange provides the common source connection for the transistors.