BLF544B

Features:

* High power gain
* Easy power control
* Good thermal stability
* Gold metallization ensures excellent reliability
* Designed for broadband operation.


Pinout




Specifications

SYMBOL	PARAMETER	CONDITIONS	MIN.	MAX.	UNIT
VDS	drain-source voltage			65	V
VGS	gate-source voltage			20	V
ID	DC drain current			2	A
Ptot	total power dissipation	Tmb 85 °C		48	W
Tstg	storage temperature		-65	150	C
Tj	junction temperature			200	C

Description

Silicon N-channel enhancement mode vertical D-MOS push-pull transistor BLF544B designed for communications transmitter
applications in the UHF frequency range.

The transistor BLF544B is encapsulated in a 4-lead, SOT268 balanced flange envelope, with two ceramic caps. The mounting flange provides the common source connection for the transistors.