BLF6G38LS-50

Frequency :
Gain :
Output Power :
Configuration : Single
Transistor Polarity : N-Channel
Maximum Operating Temperature : + 150 C
Drain-Source Breakdown Voltage : 65 V
Packaging : Tube
Gate-Source Breakdown Voltage : 13 V
Package / Case : SOT502B
Continuous Drain Current : 16.5 A


Features:

·Typical 1-carrier N-CDMA performance (Single carrier N-CDMA with pilot, paging, ync and 6 traffic channels [Walsh codes 8 - 13]. PAR = 9.7 dB at 0.01 % probability on the CCDF. Channel bandwidth is 1.23 MHz) at a frequency of 3400 MHz, 3500 MHz and 3600 MHz, a supply voltage of 28 V, an I_Dq of 450 mA, a power gain of 14 dB, a drain efficiency of 23 % and a peak output power of 70 W:
· Qualified up to a maximum VDS operation of 32 V
· Suitable for operation in the 3.4 GHz to 3.8 GHz frequency range
·Integrated ESD protection
· Excellent ruggedness
· High efficiency
· Excellent thermal stability
· Designed for broadband operation
· Internally matched for ease of use
· Low gold plating thickness on leads

Description

50 W LDMOS power transistor BLF6G38LS-50 for base station applications at frequencies from 3400 MHz to 3800 MHz.