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BFG193

Features: ·For low noise, high-gain amplifiers up to 2 GHz· For linear broadband amplifiers· fT = 8 GHz F = 1.3 dB at 900 MHzSpecifications Parameter Symbol Value Unit Collector-emitter voltage VCEO 12 V Collector-emitter voltage VCES 20 Collector-base voltage...

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BFG193: Features: ·For low noise, high-gain amplifiers up to 2 GHz· For linear broadband amplifiers· fT = 8 GHz F = 1.3 dB at 900 MHzSpecifications Parameter Symbol Value Unit Collector-emi...

BFG193 Data Sheet

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Part Number:
BFG193
Supply Ability:
5000

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Product Details

Description



Features:

·For low noise, high-gain amplifiers up to 2 GHz
· For linear broadband amplifiers
· fT = 8 GHz
      F = 1.3 dB at 900 MHz




Specifications

Parameter
Symbol
Value
Unit
Collector-emitter voltage
VCEO
12
V
Collector-emitter voltage
VCES
20
Collector-base voltage
VCBO
20
Emitter-base voltage
VEBO
2
Collector current
IC
80
mA
Base current
IB
10
Total power dissipation, TS 87 °C 1)
Ptot
600
W
Junction temperature
Tj
150
°C
Ambient temperature
TA
-65 ... 150
Storage temperature
Tstg
-65 ... 150
Thermal Resistance
Junction - soldering point2)
RthJS
105
K/W


1TS is measured on the collector lead at the soldering point to the pcb
2For calculation of RthJA please refer to Application Note Thermal Resistance




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