Position: Home  > All Categories> Integrated Circuits (ICs) > BFG10X

BFG10X

Features: · High efficiency· Small size discrete power amplifier· 900 MHz and 1.9 GHz operating areas· Gold metallization ensures excellent reliability.Application· Common emitter class-AB operation in hand-held radio equipment up to 1.9 GHz.PinoutSpecifications SYMBOL PARAMETER CONDITION...

product image

BFG10X Picture
See larger image
SeekIC No. : 004299631 Detail

BFG10X: Features: · High efficiency· Small size discrete power amplifier· 900 MHz and 1.9 GHz operating areas· Gold metallization ensures excellent reliability.Application· Common emitter class-AB operation...

BFG10X Data Sheet

floor Price/Ceiling Price

Get Latest Price
Part Number:
BFG10X
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

SeekIC Buyer Protection PLUS - newly updated for 2013!

  • Escrow Protection.
  • Guaranteed refunds.
  • Secure payments.
  • Learn more >>

Month Sales

268 Transactions

Rating

evaluate  (4.8 stars)

Upload time: 2024/12/25

add to my favourite

Payment Methods

All payment methods are secure and covered by SeekIC Buyer Protection PLUS.

Notice: When you place an order, your payment is made to SeekIC and not to your seller. SeekIC only pays the seller after confirming you have received your order. We will also never share your payment details with your seller.
Product Details

Description



Features:

· High efficiency
· Small size discrete power amplifier
· 900 MHz and 1.9 GHz operating areas
· Gold metallization ensures excellent reliability.


Application

· Common emitter class-AB operation in hand-held radio equipment up to 1.9 GHz.


Pinout

Connection Diagram


Specifications

SYMBOL PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
VCBO collector-base voltage
open emitter
-
20
V
VCEO collector-emitter voltage
open base
-
10
V
VEBO emitter-base voltage
open collector
-
2.5
V
IC collector current (DC)
-
250
mA
IC(AV) average collector current  
-
250
mA
Ptot total power dissipation
up to Ts = 102 °C; note 1
-
400
mW
Tstg storage temperature
-65
+150
°C
Tj junction temperature
-
175
°C



Description

NPN silicon planar epitaxial transistor BFG10X encapsulated in a plastic, 4-pin dual-emitter SOT343 package.




Customers Who Bought This Item Also Bought

Margin,quality,low-cost products with low minimum orders. Secure your online payments with SeekIC Buyer Protection.
You may also be interested in :
Inductors, Coils, Chokes
DR127-330-R
SD53-100-R
Tools
TCP202
G084SN05 V.3
Programmers, Development Systems
ARDUINO IIC/I2C 液晶模块
JTAG-SMT2
Kits
IT243
UVSC-110-4E1
RF and RFID
X3C26P1-30S
1P620S
Optical Inspection Equipment
AA924
A21K4B
View more