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BFG197/X

Features: · High power gain· Low noise figure· Gold metallization ensures excellent reliability.ApplicationThese products are not designed for use in life support appliances, devices, or systems where malfunction of theseproducts can reasonably be expected to result in personal injury. Philips cus...

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SeekIC No. : 004299643 Detail

BFG197/X: Features: · High power gain· Low noise figure· Gold metallization ensures excellent reliability.ApplicationThese products are not designed for use in life support appliances, devices, or systems whe...

BFG197/X Data Sheet

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Part Number:
BFG197/X
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Description



Features:

· High power gain
· Low noise figure
· Gold metallization ensures excellent reliability.


Application

These products are not designed for use in life support appliances, devices, or systems where malfunction of these
products can reasonably be expected to result in personal injury. Philips customers using or selling these products for
use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale.




Pinout

Connection Diagram Connection Diagram


Specifications

SYMBOL PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
VCBO collector-base voltage
open emitter
-
20
V
VCEO collector-emitter voltage
open base
-
10
V
VEBO emitter-base voltage
open collector
-
2.5
V
IC collector current (DC)
DC value, continuous
-
100
mA
Ptot total power dissipation
up to Ts = 75 °C; note 1
-
350
mW
Tstg storage temperature
-65
+150
°C
Tj junction temperature
-
175
°C



Description

The BFG197 is a silicon NPN transistor in a 4-pin, dual-emitter plastic SOT143 envelope. It is primarily intended for wideband applications in the GHz range, such as satellite TV systems and repeater amplifiers in fibre-optic systems.




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