BF998WR Selling Leads, Price trend, BF998WR DataSheet download, circuit diagram from SeekIC.com

Features: · High forward transfer admittance· Short channel transistor with high forward transfer admittance to input capacitance ratio· Low noise gain controlled amplifier up to 1 GHz.Application· VHF and UHF applications with 12 V supply voltage, such as television tuners and professional commun...

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SeekIC No. : 004299605 Detail

BF998WR: Features: · High forward transfer admittance· Short channel transistor with high forward transfer admittance to input capacitance ratio· Low noise gain controlled amplifier up to 1 GHz.Application· ...

BF998WR Data Sheet

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Part Number:: BF998WR
Supply Ability:: 5000

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1~5000

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Upload time: 2024/12/25

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US $.11 - .24 / Piece

Transistors RF MOSFET Small Signal N-CH DUAL GATE 20V VHF

Product Details

Description

Features:

· High forward transfer admittance
· Short channel transistor with high forward transfer admittance to input capacitance ratio
· Low noise gain controlled amplifier up to 1 GHz.

Application

· VHF and UHF applications with 12 V supply voltage, such as television tuners and professional communications equipment.

Pinout

Connection Diagram

Specifications

SYMBOL	PARAMETER	CONDITIONS	MIN.	TYP.	MAX.	UNIT
V_DS	drain-source voltage		-	-	12	V
I_D	drain current		-	-	30	mA
Ptot	total power dissipation		-	-	300	mW
T_j	junction temperature		-	-	150	°C
\|Y_fs\|	transfer admittance		-	24	-	mS
C_ig1-s	input capacitance at gate 1		-	2.1	-	pF
C_rs	reverse transfer capacitance	f = 1 MHz	-	25	-	fF
F	noise figure	f = 800 MHz	-	1	-	dB

Description

Depletion type field-effect transistor BF998WR in a plastic microminiature SOT343R package with source and substrate interconnected. The transistor is protected against excessive input voltage surges by integrated back-to-back diodes between gates and source.

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BF998WR

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